5秒后页面跳转
IS61QDB42M18C-333M3I PDF预览

IS61QDB42M18C-333M3I

更新时间: 2022-09-29 19:53:06
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
32页 804K
描述
IC SRAM 36M PARALLEL 165LFBGA

IS61QDB42M18C-333M3I 数据手册

 浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第2页浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第3页浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第4页浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第6页浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第7页浏览型号IS61QDB42M18C-333M3I的Datasheet PDF文件第8页 
IS61QDB42M18C  
IS61QDB41M36C  
The data-in provided for writing is initially kept in write buffers. The information in these buffers is written into the array  
on the third write cycle. A read cycle to the last two write addresses produces data from the write buffers. The SRAM  
maintains data coherency.  
During a write, the byte writes independently control which byte of any of the four burst addresses is written (see  
X18/X36 Write Truth Tables and Timing Reference Diagram for Truth Table).  
Whenever a write is disabled (W# is high at the rising edge of K), data is not written into the memory.  
RQ Programmable Impedance  
An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust  
its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the  
SRAM. For example, an RQ of 250Ω results in a driver impedance of 50Ω. The allowable range of RQ to guarantee  
impedance matching is between 175Ω and 350Ω at VDDQ=1.5V. The RQ resistor should be placed less than two inches  
away from the ZQ ball on the SRAM module. The capacitance of the loaded ZQ trace must be less than 7.5pF.  
The ZQ pin can also be directly connected to VDDQ to obtain a minimum impedance setting. ZQ should not be  
connected to VSS.  
Programmable Impedance and Power-Up Requirements  
Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in  
supply voltage and temperature. During power-up, the driver impedance is in the middle of allowable impedances  
values. The final impedance value is achieved within 1024 clock cycles.  
Clock Consideration  
This device uses an internal DLL for maximum output data valid window. It can be placed in a stopped-clock mode to  
minimize power and requires only 1024 cycles to restart.  
No clocks can be issued until VDD reaches its allowable operating range.  
Single Clock Mode  
This device can be also operated in single-clock mode. In this case, C and C# are both connected high at power-up  
and must never change. Under this condition, K and K# will control the output timings.  
Either clock pair must have both polarities switching and must never connect to VREF, as they are not differential  
clocks.  
Depth Expansion  
Separate input and output ports enable easy depth expansion, as each port can be selected and deselected  
independently. Read and write operations can occur simultaneously without affecting each other. Also, all pending  
read and write transactions are always completed prior to deselecting the corresponding port.  
Delay Locked Loop (DLL)  
Delay Locked Loop (DLL) is a new system to align the output data coincident with clock rising or falling edge to  
enhance the output valid timing characteristics. It is locked to the clock frequency and is constantly adjusted to match  
the clock frequency. Therefore device can have stable output over the temperature and voltage variation.  
DLL has a limitation of locking range and jitter adjustment which are specified as tKHKH and tKCvar respectively in the  
AC timing characteristics. In order to turn this feature off, applying logic low to the Doff# pin will bypass this. In the DLL  
off mode, the device behaves with one cycle latency and a longer access time which is known in DDR-I or legacy  
QUAD mode.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. A1  
5
04/06/2016  

与IS61QDB42M18C-333M3I相关器件

型号 品牌 描述 获取价格 数据表
IS61QDB42M18C-333M3L ISSI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

获取价格

IS61QDB42M18C-333M3LI ISSI IC SRAM 36M PARALLEL 165LFBGA

获取价格

IS61QDB42M36 ISSI 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 4) Synchronous SRAMs

获取价格

IS61QDB42M36-250M3 ISSI 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 4) Synchronous SRAMs

获取价格

IS61QDB42M36-300M3 ISSI 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 4) Synchronous SRAMs

获取价格

IS61QDB42M36A ISSI 2Mx36 and 4Mx18 configuration available

获取价格