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IS61NVP102418B-200B3LI PDF预览

IS61NVP102418B-200B3LI

更新时间： 2024-11-18 14:42:55
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
37页 1856K
描述
Standard SRAM, 1MX18, 3ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, TFBGA-165

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IS61NVP102418B-200B3LI 技术参数

生命周期：Active包装说明：TBGA,
Reach Compliance Code：unknown风险等级：5.74
最长访问时间：3 nsJESD-30 代码：R-PBGA-B165
长度：15 mm内存密度：18874368 bit
内存集成电路类型：STANDARD SRAM内存宽度：18
功能数量：1端子数量：165
字数：1048576 words字数代码：1000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：1MX18
封装主体材料：PLASTIC/EPOXY封装代码：TBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：PARALLEL座面最大高度：1.2 mm
最大供电电压 (Vsup)：2.625 V最小供电电压 (Vsup)：2.375 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM宽度：13 mm
Base Number Matches：1

IS61NVP102418B-200B3LI 数据手册

 浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第2页浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第3页浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第4页浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第5页浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第6页浏览型号IS61NVP102418B-200B3LI的Datasheet PDF文件第7页 
IS61NLP51236(32)B/IS61NVP51236(32)B/IS61NVVP51236(32)B  
IS61NLP102418B/IS61NVP102418B/IS61NVVP102418B  
512K x36 and 1024K x18 18Mb, PIPELINE 'NO WAIT' STATE BUS  
SYNCHRONOUS SRAM  
NOVEMBER 2013  
ADVANCED INFORMATION  
FEATURES  
DESCRIPTION  
•
•
•
•
•
•
100 percent bus utilization  
The 18Meg product family features high-speed,  
low-power synchronous static RAMs designed to  
provide a burstable, high-performance, 'no wait'  
state, device for networking and communications  
applications. They are organized as 512K words  
by 36 bits and 1024K words by 18 bits, fabricated  
with ISSI's advanced CMOS technology.  
Incorporating a 'no wait' state feature, wait cycles  
are eliminated when the bus switches from read  
to write, or write to read. This device integrates a  
2-bit burst counter, high-speed SRAM core, and  
high-drive capability outputs into a single  
monolithic circuit.  
All synchronous inputs pass through registers are  
controlled by a positive-edge-triggered single  
clock input. Operations may be suspended and all  
synchronous inputs ignored when Clock Enable,  
/CKE is HIGH. In this state the internal device will  
hold their previous values.  
No wait cycles between Read and Write  
Internal self-timed write cycle  
Individual Byte Write Control  
Single R/W (Read/Write) control pin  
Clock controlled, registered address, data and  
control  
Interleaved or linear burst sequence control  
using MODE input  
Three chip enables for simple depth  
expansion and address pipelining  
Power Down mode  
Common data inputs and data outputs  
/CKE pin to enable clock and suspend  
operation  
JEDEC 100-pin TQFP, 165-ball PBGA and  
119-ball PBGA packages  
•
•
•
•
•
•
•
Power supply:  
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)  
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)  
NVVP: VDD 1.8V (± 5%), VDDQ 1.8V (± 5%)  
JTAG Boundary Scan for PBGA packages  
Commercial, Industrial and Automotive (x36)  
temperature support  
All Read, Write and Deselect cycles are initiated  
by the ADV input. When the ADV is HIGH the  
internal burst counter is incremented. New  
external addresses can be loaded when ADV is  
LOW.  
•
•
•
•
Lead-free available  
For leaded option, please contact ISSI.  
Write cycles are internally self-timed and are  
initiated by the rising edge of the clock inputs and  
when /WE is LOW. Separate byte enables allow  
individual bytes to be written.  
A burst mode pin (MODE) defines the order of the  
burst sequence. When tied HIGH, the interleaved  
burst sequence is selected. When tied LOW, the  
linear burst sequence is selected.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
Clock Access Time  
Cycle time  
-250  
2.6  
4
-200  
3.0  
5
Units  
ns  
tKC  
ns  
Frequency  
250  
200  
MHz  
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI  
assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device  
specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be  
expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated  
Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. 00A  
1
11/22/2013  
1234567...37

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与IS61NVP102418B-200B3LI相关器件

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IS61NVP102418B-200TQL ISSI

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 		Standard SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, LQFP-100
IS61NVP102436-166B3I ISSI

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 		ZBT SRAM, 1MX36, 3.5ns, CMOS, PBGA165, PLASTIC, BGA-165
IS61NVP102436-166TQI ISSI

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 		ZBT SRAM, 1MX36, 3.5ns, CMOS, PQFP100, TQFP-100
IS61NVP102436-250B3I ISSI

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 		ZBT SRAM, 1MX36, 2.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
IS61NVP102436A ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP102436A-166B3 ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP102436A-166B3I ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP102436A-166TQ ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP102436A-166TQI ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM
IS61NVP102436A-166TQL ISSI

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 		1Mb x 36 and 2Mb x 18 STATE BUS SRAM

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