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IS61NLF25632-10BI PDF预览

IS61NLF25632-10BI

更新时间： 2024-11-24 14:51:39
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
20页 159K
描述
ZBT SRAM, 256KX32, 10ns, CMOS, PBGA119, PLASTIC, BGA-119

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IS61NLF25632-10BI 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：PLASTIC, BGA-119针数：119
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.92
最长访问时间：10 nsJESD-30 代码：R-PBGA-B119
JESD-609代码：e0长度：22 mm
内存密度：8388608 bit内存集成电路类型：ZBT SRAM
内存宽度：32功能数量：1
端子数量：119字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX32封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
峰值回流温度（摄氏度）：240认证状态：Not Qualified
座面最大高度：2.41 mm最大供电电压 (Vsup)：3.465 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
宽度：14 mmBase Number Matches：1

IS61NLF25632-10BI 数据手册

 浏览型号IS61NLF25632-10BI的Datasheet PDF文件第2页浏览型号IS61NLF25632-10BI的Datasheet PDF文件第3页浏览型号IS61NLF25632-10BI的Datasheet PDF文件第4页浏览型号IS61NLF25632-10BI的Datasheet PDF文件第5页浏览型号IS61NLF25632-10BI的Datasheet PDF文件第6页浏览型号IS61NLF25632-10BI的Datasheet PDF文件第7页 
®
IS61NF25632 IS61NF25636 IS61NF51218  
IS61NLF25632 IS61NLF25636 IS61NLF51218 ISSI  
256K x 32, 256K x 36 and 512K x 18  
FLOW-THROUGH 'NO WAIT' STATE BUS  
SRAM  
PRELIMINARY INFORMATION  
SEPTEMBER 2001  
FEATURES  
DESCRIPTION  
The 8 Meg 'NF' product family feature high-speed,  
low-power synchronous static RAMs designed to provide  
a burstable, high-performance, 'no wait' state, device for  
network and communications customers. They are  
organized as 262,144 words by 32 bits, 262,144 words  
by 36 bits and 524,288 words by 18 bits, fabricated with  
ISSI's advanced CMOS technology.  
• 100 percent bus utilization  
• No wait cycles between Read and Write  
• Internal self-timed write cycle  
• Individual Byte Write Control  
• Single R/W (Read/Write) control pin  
• Clock controlled, registered address,  
data and control  
Incorporating a 'no wait' state feature, wait cycles are  
eliminated when the bus switches from read to write, or  
write to read. This device integrates a 2-bit burst counter,  
high-speed SRAM core, and high-drive capability outputs  
into a single monolithic circuit.  
• Interleaved or linear burst sequence control  
using MODE input  
• Three chip enables for simple depth expansion  
and address pipelining for TQFP  
Allsynchronousinputspassthroughregistersarecontrolled  
byapositive-edge-triggeredsingleclockinput.Operations  
may be suspended and all synchronous inputs ignored  
when Clock Enable, CKE is HIGH. In this state the internal  
device will hold their previous values.  
• Power Down mode  
• Common data inputs and data outputs  
• CKE pin to enable clock and suspend operation  
• JEDEC 100-pin TQFP, 119 PBGA package  
• Single +3.3V power supply (± 5%)  
• NF Version: 3.3V I/O Supply Voltage  
• NLF Version: 2.5V I/O Supply Voltage  
• Industrialtemperatureavailable  
All Read, Write and Deselect cycles are initiated by the  
ADV input. When the ADV is HIGH the internal burst  
counter is incremented. New external addresses can be  
loaded when ADV is LOW.  
Write cycles are internally self-timed and are initiated by  
the rising edge of the clock inputs and when WE is LOW.  
Separate byte enables allow individual bytes to be written.  
A burst mode pin (MODE) defines the order of the burst  
sequence.WhentiedHIGH,theinterleavedburstsequence  
is selected. When tied LOW, the linear burst sequence is  
selected.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-10  
10  
12  
83  
Units  
ns  
Clock Access Time  
Cycle Time  
tKC  
ns  
Frequency  
MHz  
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the  
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
PRELIMINARY INFORMATION Rev. 00E  
1
09/25/01  
1234567...20

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与IS61NLF25632-10BI相关器件

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IS61NLF25632-9B ISSI

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 		ZBT SRAM, 256KX32, 9ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61NLF25632-9TQ ISSI

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 		ZBT SRAM, 256KX32, 9ns, CMOS, PQFP100, TQFP-100
IS61NLF25636 ISSI

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 		SRAM
IS61NLF25636-10TQI ISSI

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 		ZBT SRAM, 256KX36, 10ns, CMOS, PQFP100, TQFP-100
IS61NLF25636-9TQ ISSI

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 		ZBT SRAM, 256KX36, 9ns, CMOS, PQFP100, TQFP-100
IS61NLF25636A ISSI

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 		256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF25636A-6.5B2 ISSI

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 		256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF25636A-6.5B2I ISSI

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 		256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF25636A-6.5B3 ISSI

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 		256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NLF25636A-6.5B3I ISSI

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 		256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM

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