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IS61C1024L-25KI PDF预览

IS61C1024L-25KI

更新时间: 2024-11-19 22:48:03
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
11页 83K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C1024L-25KI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.400 INCH, PLASTIC, SOJ-32针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.85
最长访问时间:25 ns其他特性:TTL COMPATIBLE INPUTS/OUTPUTS
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.955 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:3.683 mm最大待机电流:0.00075 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.11 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS61C1024L-25KI 数据手册

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®
IS61C1024  
ISSI  
IS61C1024L  
128K x 8 HIGH-SPEED  
CMOS STATIC RAM  
MAY 1999  
DESCRIPTION  
FEATURES  
The ISSI IS61C1024 and IS61C1024L are very high-speed,  
low power, 131,072-word by 8-bit CMOS static RAMs. They  
are fabricated using ISSI's high-performance CMOS  
technology.Thishighlyreliableprocesscoupledwithinnovative  
circuit design techniques, yields higher performance and low  
power consumption devices.  
• High-speed access time: 12, 15, 20, 25 ns  
Low active power: 600 mW (typical)  
Low standby power: 500 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
EasymemoryexpansionisprovidedbyusingtwoChipEnable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
• Low power version available: IS61C1024L  
The IS61C1024 and IS61C1024L are available in 32-pin  
300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,  
8 x 13.4) packages.  
• Commercial and industrial temperature ranges  
available  
FUNCTIONAL BLOCK DIAGRAM  
512 x 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
SR028-1K  
05/12/99  

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