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IS61C1024-20K

更新时间： 2024-11-05 22:48:03

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
11页	83K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM

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替代型号

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IS61C1024-20K 数据手册

IS61C1024

ISSI

IS61C1024L

128K x 8 HIGH-SPEED

CMOS STATIC RAM

MAY 1999

DESCRIPTION

FEATURES

The ISSI IS61C1024 and IS61C1024L are very high-speed,

low power, 131,072-word by 8-bit CMOS static RAMs. They

are fabricated using ISSI's high-performance CMOS

technology.Thishighlyreliableprocesscoupledwithinnovative

circuit design techniques, yields higher performance and low

power consumption devices.

• High-speed access time: 12, 15, 20, 25 ns

• Low active power: 600 mW (typical)

• Low standby power: 500 µW (typical) CMOS

standby

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

When CE1 is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation can

be reduced by using CMOS input levels.

• Fully static operation: no clock or refresh

required

EasymemoryexpansionisprovidedbyusingtwoChipEnable

inputs, CE1 and CE2. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

• TTL compatible inputs and outputs

• Single 5V (±10%) power supply

• Low power version available: IS61C1024L

The IS61C1024 and IS61C1024L are available in 32-pin

300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I,

8 x 13.4) packages.

• Commercial and industrial temperature ranges

available

FUNCTIONAL BLOCK DIAGRAM

512 x 2048

MEMORY ARRAY

A0-A16

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CE1

CE2

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

Integrated Silicon Solution, Inc. — 1-800-379-4774

SR028-1K

05/12/99

12 3 4 5 6 7...11

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IS61C1024-20K 替代型号

型号	品牌	替代类型	描述	数据表
CY7C109-20VC	CYPRESS	功能相似	128K x 8 Static RAM
CY7C109B-20VC	CYPRESS	功能相似	128K x 8 Static RAM

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