Datasheet > IS43R86400F-6BL

IS43R86400F-6BL

更新时间： 2024-11-24 18:28:39

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
29页	795K
描述
DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60

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技术参数
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IS43R86400F-6BL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TBGA,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	8 weeks
风险等级：	5.63	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	0.7 ns	其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
JESD-30 代码：	R-PBGA-B60	长度：	13 mm
内存密度：	536870912 bit	内存集成电路类型：	DDR DRAM
内存宽度：	8	功能数量：	1
端口数量：	1	端子数量：	60
字数：	67108864 words	字数代码：	64000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TBGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE
峰值回流温度（摄氏度）：	NOT SPECIFIED	座面最大高度：	1.2 mm
自我刷新：	YES	最大供电电压 (Vsup)：	2.7 V
最小供电电压 (Vsup)：	2.3 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	8 mm
Base Number Matches：	1

IS43R86400F-6BL 数据手册

Long-term Support

World Class Quality

IS43/46R86400F

IS43/46R16320F

32Mx16, 64Mx8

DECEMBER 2016

512Mb DDR SDRAM

FEATURES

DEVICE OVERVIEW

•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ±ꢀ0.2Vꢀ(-5,ꢀ-6)

•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ±ꢀ0.1Vꢀ(-4)

•ꢀ SSTL_2ꢀcompatibleꢀI/O

ISSI’sꢀ512-MbitꢀDDRꢀSDRAMꢀachievesꢀhighꢀspeedꢀdataꢀ

transfer using pipeline architecture and two data word

accessesꢀperꢀclockꢀcycle.ꢀTheꢀ536,870,912-bitꢀmemoryꢀ

arrayꢀisꢀinternallyꢀorganizedꢀasꢀfourꢀbanksꢀofꢀ128Mbꢀtoꢀ

allowꢀconcurrentꢀoperations.ꢀTheꢀpipelineꢀallowsꢀReadꢀ

and Write burst accesses to be virtually continuous, with

theꢀoptionꢀtoꢀconcatenateꢀorꢀtruncateꢀtheꢀbursts.ꢀTheꢀ

programmable features of burst length, burst sequence

andꢀCASꢀlatencyꢀenableꢀfurtherꢀadvantages.ꢀTheꢀdeviceꢀ

isꢀavailableꢀinꢀ8-bitꢀandꢀ16-bitꢀwordꢀsize.ꢀInputꢀdataꢀisꢀ

registeredꢀonꢀtheꢀI/OꢀpinsꢀonꢀbothꢀedgesꢀofꢀDataꢀStrobeꢀ

signal(s),ꢀwhileꢀoutputꢀdataꢀisꢀreferencedꢀtoꢀbothꢀedgesꢀ

ofꢀDataꢀStrobeꢀandꢀbothꢀedgesꢀofꢀCLK.ꢀCommandsꢀareꢀ

registeredꢀonꢀtheꢀpositiveꢀedgesꢀofꢀCLK.ꢀ

•ꢀ Double-dataꢀrateꢀarchitecture;ꢀtwoꢀdataꢀtransfersꢀ

per clock cycle

•ꢀ Bidirectional,ꢀdataꢀstrobeꢀ(DQS)ꢀisꢀtransmitted/

received with data, to be used in capturing data

at the receiver

•ꢀ DQSꢀisꢀedge-alignedꢀwithꢀdataꢀforꢀREADsꢀandꢀ

centre-alignedꢀwithꢀdataꢀforꢀWRITEs

•ꢀ Differentialꢀclockꢀinputsꢀ(CKꢀand CK)

•ꢀ DLLꢀalignsꢀDQꢀandꢀDQSꢀtransitionsꢀwithꢀCKꢀ

transitions

•ꢀ CommandsꢀenteredꢀonꢀeachꢀpositiveꢀCKꢀedge;ꢀ

data and data mask referenced to both edges of

DQS

AnꢀAutoꢀRefreshꢀmodeꢀisꢀprovided,ꢀalongꢀwithꢀaꢀSelfꢀ

Refreshꢀmode.ꢀAllꢀI/OsꢀareꢀSSTL_2ꢀcompatible.

•ꢀ Fourꢀinternalꢀbanksꢀforꢀconcurrentꢀoperation

ADDRESS TABLE

•ꢀ DataꢀMaskꢀforꢀwriteꢀdata.ꢀDMꢀmasksꢀwriteꢀdataꢀ

Parameter

32M x 16

64M x 8

at both rising and falling edges of data strobe

Conﬁguration 8Mꢀxꢀ16ꢀxꢀ4ꢀ

16Mꢀxꢀ8ꢀxꢀ4ꢀ

•ꢀ BurstꢀLength:ꢀ2,ꢀ4ꢀandꢀ8

banks

•ꢀ BurstꢀType:ꢀSequentialꢀandꢀInterleaveꢀmode

•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ2.5ꢀandꢀ3ꢀ

•ꢀ AutoꢀRefreshꢀandꢀSelfꢀRefreshꢀModes

•ꢀ AutoꢀPrecharge

BankꢀAddressꢀ BA0,ꢀBA1

Pins

BA0,ꢀBA1

Autoprecharge A10/AP

Pins

A10/AP

RowꢀAddress 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

OPTIONS

•ꢀ Conﬁguration(s):ꢀ32Mx16,ꢀ64Mx8

Column

Address

1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

A11)

•ꢀ Package(s):ꢀ

66-pinꢀTSOP-IIꢀ

ꢀ 60-ballꢀBGA

RefreshꢀCount

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

•ꢀ Lead-freeꢀpackageꢀavailable

•ꢀ TemperatureꢀRange:ꢀ

ꢀ Commercialꢀ(0°Cꢀtoꢀ+70°C)

ꢀ Industrialꢀ(-40°Cꢀtoꢀ+85°C)

Automotive,ꢀA1ꢀ(-40°Cꢀtoꢀ+85°C)

Automotive,ꢀA2ꢀ(-40°Cꢀtoꢀ+105°C)

KEY TIMING PARAMETERS

Speed Grade

-4

-5

-6

Units

MHz

ckꢀMaxꢀCLꢀ=ꢀ3ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ250ꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀ167ꢀ

ꢀ

ckꢀMaxꢀCLꢀ=ꢀ2.5ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ167ꢀꢀꢀꢀꢀꢀꢀꢀ167ꢀꢀꢀꢀꢀꢀꢀꢀ167ꢀ

ckꢀMaxꢀCLꢀ=ꢀ2ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ133ꢀꢀꢀꢀꢀꢀꢀꢀ133ꢀꢀꢀꢀꢀꢀꢀꢀ133ꢀ

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. A

12/02/2016

12 3 4 5 6 7...29

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与IS43R86400F-6BL相关器件

型号	品牌	获取价格	描述	数据表
IS43R86400F-6BLI	ISSI	获取价格	DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, FBGA-60
IS43R86400F-6TLI	ISSI	获取价格	DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, TSOP2-66
IS43TR16128A	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-107MBL	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-107MBLI	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-125KBL	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-125KBLI	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-15HBL	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-15HBLI	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-187FBL	ISSI	获取价格	256Mx8, 128Mx16 2Gb DDR3 SDRAM

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