Datasheet > IS43R16160F-6TLI-TR

IS43R16160F-6TLI-TR

更新时间： 2024-11-21 22:58:27

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
32页	756K
描述
IC DRAM 256M PARALLEL 66TSOP II

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IS43/46R83200F

IS43/46R16160F

IS43/46R32800F

8Mx32, 16Mx16, 32Mx8

256Mb DDR SDRAM

FEATURES

• VDD and VDDQ: 2.5V 0.2V

• SSTL_2 compatible I/O

• Double-data rate architecture; two data transfers

per clock cycle

• Bidirectional, data strobe (DQS) is transmitted/

received with data, to be used in capturing data

at the receiver

• DQS is edge-aligned with data for READs and

centre-aligned with data for WRITEs

Long-term Support

World Class Quality

AUGUST 2020

DEVICE OVERVIEW

ISSI’s 256-Mbit DDR SDRAM achieves high speed data

transfer using pipeline architecture and two data word

accesses per clock cycle. The 268,435,456-bit memory

array is internally organized as four banks of 64Mb to

allow concurrent operations. The pipeline allows Read

and Write burst accesses to be virtually continuous, with

the option to concatenate or truncate the bursts. The

programmable features of burst length, burst sequence

and CAS latency enable further advantages. The device

is available in 8-bit, 16-bit and 32-bit data word size

Input data is registered on the I/O pins on both edges

of Data Strobe signal(s), while output data is referenced

to both edges of Data Strobe and both edges of CLK.

Commands are registered on the positive edges of CLK.

• Differential clock inputs (CK and CK)

• DLL aligns DQ and DQS transitions with CK

transitions

An Auto Refresh mode is provided, along with a Self

Refresh mode. All I/Os are SSTL_2 compatible.

•

Commands entered on each positive CK edge; data

and data mask referenced to both edges of DQS

ADDRESS TABLE

• Four internal banks for concurrent operation

Parameter

8M x 32

16M x 16

32M x 8

• Data Mask for write data. DM masks write data

at both rising and falling edges of data strobe

• Burst Length: 2, 4 and 8

Conﬁguration 2M x 32 x 4

banks

4M x 16 x 4

banks

8M x 8 x 4

banks

• Burst Type: Sequential and Interleave mode

• Programmable CAS latency: 2, 2.5 and 3

• Auto Refresh and Self Refresh Modes

• Concurrent Auto Precharge supported

• TRAS Lockout supported (tRAP = tRCD)

Bank Address BA0, BA1

Pins

BA0, BA1

Autoprecharge A8/AP

Pins

A10/AP

Row Address 4K(A0 – A11) 8K(A0 – A12) 8K(A0 – A12)

Column

Address

512(A0 – A7, 512(A0 – A8) 1K(A0 – A9)

A9)

OPTIONS

Refresh Count

Com./Ind./A1 4K / 64ms

A2 4K / 16ms

• Conﬁguration(s): 8Mx32, 16Mx16, 32Mx8

8K / 64ms

8K / 16ms

8K / 64ms

• Package(s):

144 Ball BGA (x32)

66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)

• Lead-free package

• Temperature Range:

KEY TIMING PARAMETERS

Speed Grade

-5

-6

Units

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)

Automotive, A1 (-40°C to +85°C)

Automotive, A2 (-40°C to +105°C)

FCk Max CL = 3

FCk Max CL = 2.5

FCk Max CL = 2

200

167

133

167

133

MHz

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest

version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. C1

08/26/2020

12 3 4 5 6 7...32

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IS43R16160F-6TLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS43R16160F-6TLI	ISSI	功能相似	IC DRAM 256M PARALLEL 66TSOP II

与IS43R16160F-6TLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS43R16160F-6TL-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 66TSOP II
IS43R16320A	ISSI	获取价格	32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-5TL	ISSI	获取价格	DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, LEAD FREE, TSOP2-66
IS43R16320A-6TL	ISSI	获取价格	32Meg x 16 512-MBIT DDR SDRAM
IS43R16320B-5TL	ISSI	获取价格	DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66
IS43R16320D-5BLI	ISSI	获取价格	IC DRAM 512M PARALLEL 60TFBGA
IS43R16320D-5BLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 60TFBGA
IS43R16320D-5BL-TR	ISSI	获取价格	Cache DRAM Module, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH,
IS43R16320D-5TL	ISSI	获取价格	IC DRAM 512M PARALLEL 66TSOP II
IS43R16320D-5TLI	ISSI	获取价格	IC DRAM 512M PARALLEL 66TSOP II

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