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IS42R16320D-7BL-TR PDF预览

IS42R16320D-7BL-TR

更新时间: 2023-01-03 04:44:09
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
66页 1332K
描述
Cache DRAM Module, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-207, TFBGA-54

IS42R16320D-7BL-TR 数据手册

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IS42/45R86400D/16320D/32160D, IS42/45S86400D/16320D/32160D  
PiN FUNcTiONS  
Symbol  
Type  
Funꢁtꢀon (in detaꢀl)  
A0-A12ꢀ  
InputꢀPin  
AddressꢀInputs:ꢀA0-A12ꢀareꢀsampledꢀduringꢀtheꢀACTIVEꢀcommandꢀ(row-addressꢀ  
A0-A12)ꢀandꢀREAD/WRITEꢀcommandꢀ(columnꢀaddressꢀA0-A9,ꢀA11ꢀ(x8);ꢀA0-A9ꢀ  
(x16);ꢀA0-A8ꢀ(x32);ꢀwithꢀA10ꢀdefiningꢀautoꢀprecharge)ꢀtoꢀselectꢀoneꢀlocationꢀoutꢀofꢀ  
theꢀmemoryꢀarrayꢀinꢀtheꢀrespectiveꢀbank.ꢀA10ꢀisꢀsampledꢀduringꢀaꢀPRECHARGEꢀ  
commandꢀtoꢀdetermineꢀifꢀallꢀbanksꢀareꢀtoꢀbeꢀprechargedꢀ(A10ꢀHIGH)ꢀorꢀbankꢀ  
selectedꢀbyꢀBA0,ꢀBA1ꢀ(LOW).ꢀTheꢀaddressꢀinputsꢀalsoꢀprovideꢀtheꢀop-codeꢀduringꢀaꢀ  
LOADꢀMODEꢀREGISTERꢀcommand.  
BA0,ꢀBA1  
InputꢀPin  
InputꢀPin  
InputꢀPin  
BankꢀSelectꢀAddress:ꢀBA0ꢀandꢀBA1ꢀdefinesꢀwhichꢀbankꢀtheꢀACTIVE,ꢀREAD,ꢀWRITEꢀ  
orꢀPRECHARGEꢀcommandꢀisꢀbeingꢀapplied.  
CASꢀ  
CAS,ꢀinꢀconjunctionꢀwithꢀtheꢀRASꢀandꢀꢀWE,ꢀformsꢀtheꢀdeviceꢀcommand.ꢀSeeꢀtheꢀ  
"CommandꢀTruthꢀTable"ꢀforꢀdetailsꢀonꢀdeviceꢀcommands.ꢀ  
CKEꢀ  
TheꢀCKEꢀinputꢀdeterminesꢀwhetherꢀtheꢀCLKꢀinputꢀisꢀenabled.ꢀTheꢀnextꢀrisingꢀedgeꢀ  
ofꢀtheꢀCLKꢀsignalꢀwillꢀbeꢀvalidꢀwhenꢀisꢀCKEꢀHIGHꢀandꢀinvalidꢀwhenꢀLOW.ꢀWhenꢀCKEꢀ  
isꢀLOW,ꢀtheꢀdeviceꢀwillꢀbeꢀinꢀeitherꢀpower-downꢀmode,ꢀclockꢀsuspendꢀmode,ꢀorꢀselfꢀ  
refreshꢀmode.ꢀCKEꢀisꢀanasynchronousꢀinput.  
CLKꢀ  
InputꢀPin  
InputꢀPin  
CLKꢀisꢀtheꢀmasterꢀclockꢀinputꢀforꢀthisꢀdevice.ꢀExceptꢀforꢀCKE,ꢀallꢀinputsꢀtoꢀthisꢀdeviceꢀ  
areꢀacquiredꢀinꢀsynchronizationꢀwithꢀtheꢀrisingꢀedgeꢀofꢀthisꢀpin.  
CSꢀ  
TheꢀCSꢀinputꢀdeterminesꢀwhetherꢀcommandꢀinputꢀisꢀenabledꢀwithinꢀtheꢀdevice.ꢀ  
CommandꢀinputꢀisꢀenabledꢀwhenꢀCSꢀisꢀLOW,ꢀandꢀdisabledꢀwithꢀCSꢀisꢀHIGH.ꢀTheꢀ  
deviceꢀremainsꢀinꢀtheꢀpreviousꢀstateꢀwhenꢀCSꢀisꢀHIGH.  
DQM:ꢀx8ꢀ  
InputꢀPin  
DQxꢀpinsꢀcontrolꢀtheꢀbytesꢀofꢀtheꢀI/Oꢀbuffers.ꢀForꢀexampleꢀwithꢀx16,ꢀinꢀreadꢀmode,  
DQMLꢀandꢀDQMHꢀcontrolꢀtheꢀoutputꢀbuffer.ꢀWhenꢀDQMLꢀorꢀDQMHꢀisꢀLOW,ꢀthe  
DQML,ꢀDQMH:ꢀx16ꢀ  
DQM0-DQM3:ꢀx32ꢀ  
correspondingꢀbufferꢀbyteꢀisꢀenabled,ꢀandꢀwhenꢀHIGH,ꢀdisabled.ꢀTheꢀoutputsꢀgoꢀtoꢀ  
theꢀHIGHꢀimpedanceꢀstateꢀwhenꢀDQML/DQMHꢀisꢀHIGH.ꢀThisꢀfunctionꢀcorrespondsꢀ  
toꢀOEꢀinꢀconventionalꢀDRAMs.ꢀInꢀwriteꢀmode,ꢀDQMLꢀandꢀDQMHꢀcontrolꢀtheꢀinputꢀ  
buffer.ꢀWhenꢀDQMLꢀorꢀDQMHꢀisꢀLOW,ꢀtheꢀcorrespondingꢀbufferꢀbyteꢀisꢀenabled,ꢀ  
andꢀdataꢀcanꢀbeꢀwrittenꢀtoꢀtheꢀdevice.ꢀWhenꢀDQMLꢀorꢀDQMHꢀisꢀHIGH,ꢀinputꢀdataꢀisꢀ  
maskedꢀandꢀcannotꢀbeꢀwrittenꢀtoꢀtheꢀdevice.  
DQ0-DQ7:ꢀx8ꢀ  
DQ0-DQ15:ꢀx16ꢀ  
ꢀ Input/Outputꢀ  
DataꢀonꢀtheꢀDataꢀBusꢀisꢀlatchedꢀonꢀDQꢀpinsꢀduringꢀWriteꢀcommands,ꢀandꢀbufferedꢀfor  
outputꢀafterꢀReadꢀcommands.  
DQ0-DQ31:ꢀx32  
RASꢀ  
InputꢀPin  
RAS,ꢀinꢀconjunctionꢀwithꢀCASꢀandꢀWE,ꢀformsꢀtheꢀdeviceꢀcommand.ꢀSeeꢀtheꢀ"Com-  
mandꢀTruthꢀTable"ꢀitemꢀforꢀdetailsꢀonꢀdeviceꢀcommands.  
WEꢀ  
ꢀInputꢀPin  
WE,ꢀinꢀconjunctionꢀwithꢀRASꢀandꢀCAS,ꢀformsꢀtheꢀdeviceꢀcommand.ꢀSeeꢀtheꢀ"Com-  
mandꢀTruthꢀTable"ꢀitemꢀforꢀdetailsꢀonꢀdeviceꢀcommands.ꢀ  
Vddqꢀ  
Vddꢀ  
PowerꢀSupplyꢀPin  
PowerꢀSupplyꢀPin  
PowerꢀSupplyꢀPin  
PowerꢀSupplyꢀPin  
Vddq isꢀtheꢀoutputꢀbufferꢀpowerꢀsupply.  
Vddꢀisꢀtheꢀdeviceꢀinternalꢀpowerꢀsupply.  
Vssqꢀisꢀtheꢀoutputꢀbufferꢀground.  
Vssqꢀ  
Vssꢀ  
Vssꢀisꢀtheꢀdeviceꢀinternalꢀground.  
Integrated Silicon Solution, Inc. — www.issi.comꢀ  
7
Rev.ꢀ00B  
06/09/2011  

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