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IS41C16257-35K PDF预览

IS41C16257-35K

更新时间: 2024-09-29 22:48:03
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
17页 164K
描述
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

IS41C16257-35K 数据手册

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IS41C16257  
IS41LV16257  
256K x 16 (4-MBIT) DYNAMIC RAM  
WITH FAST PAGE MODE  
®
ISSI  
MAY 1999  
DESCRIPTION  
FEATURES  
The ISSI IS41C16257 and the IS41LV16257 are 262,144  
x16-bithigh-performanceCMOSDynamicRandomAccess  
Memories. Fast Page Mode allows 512 random accesses  
within a single row with access cycle time as short as 12 ns  
per 16-bit word. The Byte Write control, of upper and lower  
byte, makes these devices ideal for use in 16- and 32-bit  
wide data bus systems.  
• Fast access and cycle time  
• TTL compatible inputs and outputs  
• Refresh Interval: 512 cycles/8 ms  
Refresh Mode: RAS-Only, CAS-before-RAS (CBR),  
and Hidden  
• JEDEC standard pinout  
ThesefeaturesmaketheIS41C16257andtheIS41LV16257  
ideally suited for high band-width graphics, digital signal  
processing, high-performance computing systems, and  
peripheral applications.  
• Single power supply:  
-- 5V ± 10% (IS41C16257)  
-- 3.3V ± 10% (IS41LV16257)  
• Byte Write and Byte Read operation via two CAS  
• Industrial temperature available  
The IS41C16257 and the IS41LV16257 are packaged in a  
40-pin, 400-mil SOJ and TSOP (Type II).  
KEY TIMING PARAMETERS  
Parameter  
-35  
35  
10  
18  
12  
60  
-60  
60  
Unit  
ns  
Max. RAS Access Time (tRAC)  
Max. CAS Access Time (tCAC)  
Max. Column Address Access Time (tAA)  
Min. Fast Page Mode Cycle Time (tPC)  
Min. Read/Write Cycle Time (tRC)  
15  
ns  
30  
ns  
25  
ns  
110  
ns  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
DR004-1B  
05/24/99  
1

IS41C16257-35K 替代型号

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IS41C16257-35KLI ISSI

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