Datasheet > IS41C16257C

IS41C16257C

更新时间： 2024-09-30 12:23:51

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
20页	361K
描述
4Mb DRAM WITH FAST PAGE MODE

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中文翻译

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IS41C16257C 数据手册

IS41C16257C

IS41LV16257C

ADVANCED INFORMATION

APRIL 2010

256Kx16

4Mb DRAM WITH FAST PAGE MODE

DESCRIPTION

FEATURES

TheꢀISSIꢀIS41C16257C/IS41LV16257Cꢀisꢀ262,144ꢀxꢀ16-

bitꢀ high-performanceꢀ CMOSꢀ Dynamicꢀ Randomꢀ Accessꢀ

Memories.ꢀFastꢀPageꢀModeꢀallowsꢀ512ꢀrandomꢀaccessesꢀ

within a single row with access cycle time as short as 12

nsꢀperꢀ16-bitꢀword.ꢀTheꢀByteꢀWriteꢀcontrol,ꢀofꢀupperꢀandꢀ

lowerꢀbyte,ꢀmakesꢀtheseꢀdevicesꢀidealꢀforꢀuseꢀinꢀ16-ꢀandꢀ

32-bit wide data bus systems.

•ꢀ Fastꢀaccessꢀandꢀcycleꢀtime

•ꢀ TTLꢀcompatibleꢀinputsꢀandꢀoutputs

•ꢀ RefreshꢀInterval:ꢀ512ꢀcycles/8ꢀms

•ꢀ RefreshꢀMode:ꢀRAS-Only, CAS-before-RAS

(CBR),ꢀandꢀHidden

•ꢀ JEDECꢀstandardꢀpinout

TheseꢀfeaturesꢀmakeꢀtheꢀIS41C16257Cꢀ/IS41LV16257Cꢀ

ideally suited for high band-width graphics, digital signal

processing, high-performance computing systems, and

peripheral applications.

•ꢀ Singleꢀpowerꢀsupply:ꢀ

5Vꢀ±ꢀ10%ꢀ(IS41C16257C)

3.3Vꢀ±ꢀ10%ꢀ(IS41LV16257C)

•ꢀ ByteꢀWriteꢀandꢀByteꢀReadꢀoperationꢀviaꢀ

TheꢀIS41C16257C/IS41LV16257Cꢀareꢀpackagedꢀinꢀaꢀ40-

pin,ꢀ400-milꢀSOJꢀandꢀTSOPꢀ(TypeꢀII).

two CAS

•ꢀ Lead-freeꢀavailable

•ꢀ Industrialꢀtemperatureꢀavailable

KEY TIMING PARAMETERS

Parameter

-35

35ꢀ

11ꢀ

18ꢀ

14ꢀ

-60

60ꢀ

15ꢀ

30ꢀ

25ꢀ

Unit

Max.ꢀRASꢀAccessꢀTimeꢀ(t^{r a c})ꢀ

Max.ꢀCASꢀAccessꢀTimeꢀ(t^{c a c})ꢀ

Max.ꢀColumnꢀAddressꢀAccessꢀTimeꢀ(t^{a a})ꢀ

Min.ꢀFastꢀPageꢀModeꢀCycleꢀTimeꢀ(t^{p c})ꢀ

Min.ꢀRead/WriteꢀCycleꢀTimeꢀ(t^{r c})ꢀ

60ꢀ 110ꢀ

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-

pected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon

Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. 00A

04/09/2010

12 3 4 5 6 7...20

中文翻译

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与IS41C16257C相关器件

型号	品牌	获取价格	描述	数据表
IS41C16257C-35TLI-TR	ISSI	获取价格	Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40,
IS41C1664-30T	ICSI	获取价格	64K x 16 bit Dynamic RAM with EDO Page Mode
IS41C4100	ISSI	获取价格	1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100-35J	ISSI	获取价格	1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100-35T	ICSI	获取价格	1Mx4 bit Dynamic RAM with EDO Page Mode
IS41C4100-60J	ISSI	获取价格	1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100-60JI	ISSI	获取价格	1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002	ICSI	获取价格	4Mx4 bit Dynamic RAM with EDO Page Mode
IS41C44002	ISSI	获取价格	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C44002-50J	ISSI	获取价格	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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