是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TSOP, TSOP40/44,.46,32 | Reach Compliance Code: | compliant |
Factory Lead Time: | 16 weeks | 风险等级: | 5.75 |
最长访问时间: | 35 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G40 | 内存密度: | 4194304 bit |
内存集成电路类型: | FAST PAGE DRAM | 内存宽度: | 16 |
端子数量: | 40 | 字数: | 262144 words |
字数代码: | 256000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 256KX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP | 封装等效代码: | TSOP40/44,.46,32 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 512 | 自我刷新: | NO |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.15 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS41C1664-30T | ICSI |
获取价格 |
64K x 16 bit Dynamic RAM with EDO Page Mode | |
IS41C4100 | ISSI |
获取价格 |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C4100-35J | ISSI |
获取价格 |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C4100-35T | ICSI |
获取价格 |
1Mx4 bit Dynamic RAM with EDO Page Mode | |
IS41C4100-60J | ISSI |
获取价格 |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C4100-60JI | ISSI |
获取价格 |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C44002 | ICSI |
获取价格 |
4Mx4 bit Dynamic RAM with EDO Page Mode | |
IS41C44002 | ISSI |
获取价格 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C44002-50J | ISSI |
获取价格 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
IS41C44002-50JI | ISSI |
获取价格 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |