5秒后页面跳转
IS41C16128-50T PDF预览

IS41C16128-50T

更新时间: 2024-10-02 04:44:43
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
21页 222K
描述
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C16128-50T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:0.400 INCH, PLASTIC, TSOP2-44/40
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.415 mm内存密度:2097152 bit
内存集成电路类型:EDO DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:40字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP40/44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
刷新周期:512座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.11 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:11.8364 mm
Base Number Matches:1

IS41C16128-50T 数据手册

 浏览型号IS41C16128-50T的Datasheet PDF文件第2页浏览型号IS41C16128-50T的Datasheet PDF文件第3页浏览型号IS41C16128-50T的Datasheet PDF文件第4页浏览型号IS41C16128-50T的Datasheet PDF文件第5页浏览型号IS41C16128-50T的Datasheet PDF文件第6页浏览型号IS41C16128-50T的Datasheet PDF文件第7页 
®
IS41C16128  
128K x 16 (2-MBIT) DYNAMIC RAM  
WITH EDO PAGE MODE  
ISSI  
AUGUST 1998  
DESCRIPTION  
FEATURES  
TheISSIIS41C16128isa131,072x16-bithigh-performance  
CMOSDynamicRandomAccessMemory.TheIS41C16128  
offers an accelerated cycle access called EDO Page Mode.  
EDO Page Mode allows 256 random accesses within a  
single row with access cycle time as short as 12 ns per 16-  
bit word. The Byte Write control, of upper and lower byte,  
makes the IS41C16128 ideal for use in 16-, 32-bit wide data  
bus systems.  
• Extended Data-Out (EDO) Page Mode  
access cycle  
• TTL compatible inputs and outputs  
• Refresh Interval: 512 cycles/8 ms  
• Refresh Mode : RAS-Only, CAS-before-RAS  
(CBR), and Hidden  
• JEDEC standard pinout  
These features make the IS41C16128 ideally suited for  
high band-width graphics, digital signal processing,  
high-performance computing systems, and peripheral  
applications.  
• Single +5V ± 10% power supply  
• Byte Write and Byte Read operation via two CAS  
• Available in 40-pin SOJ and TSOP (Type II)  
• Industrial temperature available  
The IS41C16128 is packaged in a 40-pin 400-mil SOJ and  
TSOP (Type II).  
FUNCTIONAL BLOCK DIAGRAM  
OE  
WE  
WE  
CONTROL  
LOGICS  
OE  
CONTROL  
LOGIC  
CAS  
CLOCK  
GENERATOR  
LCAS  
UCAS  
CAS  
WE  
DATA I/O BUS  
RAS  
CLOCK  
RAS  
GENERATOR  
COLUMN DECODERS  
SENSE AMPLIFIERS  
REFRESH  
COUNTER  
I/O0-I/O15  
MEMORY ARRAY  
131,072 x 16  
ADDRESS  
BUFFERS  
A0-A8  
This document contains PRELIMINARY data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We  
assume no responsibility for any errors which may appear in this publication. © Copyright 1998, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc.  
PRELIMINARY DR002-1D  
1
08/20/98  

与IS41C16128-50T相关器件

型号 品牌 获取价格 描述 数据表
IS41C16128-50TI ISSI

获取价格

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16128-60K ISSI

获取价格

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16128-60KI ISSI

获取价格

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16128-60T ISSI

获取价格

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16128-60TI ISSI

获取价格

128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256 ISSI

获取价格

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256 ICSI

获取价格

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25K ICSI

获取价格

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25KI ICSI

获取价格

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C16256-25K-TR ISSI

获取价格

DRAM