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IS25WD040-JNA1 PDF预览

IS25WD040-JNA1

更新时间： 2024-10-14 19:07:43
品牌 Logo 应用领域
美国芯成 - ISSI 时钟光电二极管内存集成电路
页数 文件大小 规格书
36页 800K
描述
Flash, 512KX8, PDSO8, 0.150 INCH, LEAD FREE, SOIC-8

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IS25WD040-JNA1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：0.150 INCH, LEAD FREE, SOIC-8Reach Compliance Code：compliant
风险等级：5.84最大时钟频率 (fCLK)：80 MHz
数据保留时间-最小值：20耐久性：200000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8长度：4.9 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：8字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL电源：1.8 V
编程电压：1.8 V认证状态：Not Qualified
筛选级别：AEC-Q100座面最大高度：1.75 mm
串行总线类型：SPI最大待机电流：0.00001 A
子类别：Flash Memories最大压摆率：0.01 mA
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.65 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL类型：NOR TYPE
宽度：3.9 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

IS25WD040-JNA1 数据手册

 浏览型号IS25WD040-JNA1的Datasheet PDF文件第2页浏览型号IS25WD040-JNA1的Datasheet PDF文件第3页浏览型号IS25WD040-JNA1的Datasheet PDF文件第4页浏览型号IS25WD040-JNA1的Datasheet PDF文件第5页浏览型号IS25WD040-JNA1的Datasheet PDF文件第6页浏览型号IS25WD040-JNA1的Datasheet PDF文件第7页 
IS25WD020/040  
2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory  
With 80 MHz Dual-Output SPI Bus Interface  
FEATURES  
• Low Power Consumption  
- Typical 2 mA active read current  
- Typical 6 mA program/erase current  
• Single Power Supply Operation  
- Low voltage range: 1.65 V – 1.95 V  
• Memory Organization  
- IS25WD020: 256K x 8 (2 Mbit)  
- IS25WD040: 512K x 8 (4 Mbit)  
• Hardware Write Protection  
- Protect and unprotect the device from write  
operation by Write Protect (WP#) Pin  
• Cost Effective Sector/Block Architecture  
- 2Mb : Uniform 4KByte sectors / Four uniform  
64KByte blocks  
- 4Mb : Uniform 4KByte sectors / Eight uniform  
64KByte blocks  
• Software Write Protection  
- The Block Protect (BP2, BP1, BP0) bits allow  
partial or entire memory to be configured as read-  
only  
• High Product Endurance  
- Guaranteed 200,000 program/erase cycles per  
single sector  
- Minimum 20 years data retention  
• Serial Peripheral Interface (SPI) Compatible  
- Supports single- or dual-output  
- Supports SPI Modes 0 and 3  
- Maximum 30 MHz clock rate for normal read  
- Maximum 80 MHz clock rate for fast read  
• Industrial Standard Pin-out and Package  
- 8-pin SOIC 208mil  
- 8-pin SOIC 150mil  
- 8-pin VVSOP 150mil  
- 8-pin WSON (5x6)  
- KGD (Call Factory)  
- Lead-free (Pb-free) package  
- Automotive Grades Available  
• Page Program (up to 256 Bytes) Operation  
- Typical 2 ms per page program  
• Sector, Block or Chip Erase Operation  
- Typical 7 ms sector, block or chip erase  
GENERAL DESCRIPTION  
The IS25WD020/040 are 2 Mbit / 4Mbit Serial Peripheral Interface (SPI) Flash memories, providing single- or  
dual-output. The devices are designed to support a 30 MHz fclock rate in normal read mode, and 80 MHz in fast  
read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage  
ranging from 1.65 Volt to 1.95 Volt, to perform read, erase and program operations. The devices can be  
programmed in standard EPROM programmers.  
The IS25WD020/040 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SlO),  
Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. They comply with all recognized  
command codes and operations. The dual-output fast read operation provides and effective serial data rate of  
160MHz.  
The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in  
one program operation. These devices are divided into uniform 4 KByte sectors or uniform 64 KByte blocks.  
The IS25WD020/040 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are  
offered in 8-pin SOIC 208mil, 8-pin SOIC 150mil, 8-pin VVSOP 150mil and 8-pin WSON. The devices operate at  
wide temperatures between -40°C to +105°C.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. A  
1
1/11/2013  
1234567...36

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