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IS25WD040-JNLE PDF预览

IS25WD040-JNLE

更新时间： 2024-10-14 19:02:11
品牌 Logo 应用领域
美国芯成 - ISSI 时钟光电二极管内存集成电路
页数 文件大小 规格书
34页 919K
描述
Flash, 512KX8, PDSO8, SOIC-8

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中文翻译

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IS25WD040-JNLE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SOP, SOP8,.25Reach Compliance Code：compliant
Factory Lead Time：14 weeks风险等级：4.89
最大时钟频率 (fCLK)：80 MHz数据保留时间-最小值：20
耐久性：200000 Write/Erase CyclesJESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1端子数量：8
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：105 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
电源：1.8 V编程电压：1.8 V
认证状态：Not Qualified筛选级别：AEC-Q100
座面最大高度：1.75 mm串行总线类型：SPI
最大待机电流：0.00001 A子类别：Flash Memories
最大压摆率：0.01 mA最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.65 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
类型：NOR TYPE宽度：3.9 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

IS25WD040-JNLE 数据手册

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IS25WD020/040  
2 Mbit / 4 Mbit Single Operating Voltage Serial Flash Memory  
With 80 MHz Dual-Output SPI Bus Interface  
FEATURES  
• Low Power Consumption  
- Typical 2 mA active read current  
- Typical 6 mA program/erase current  
• Single Power Supply Operation  
- Low voltage range: 1.65 V – 1.95 V  
• Memory Organization  
- IS25WD020: 256K x 8 (2 Mbit)  
- IS25WD040: 512K x 8 (4 Mbit)  
• Hardware Write Protection  
- Protect and unprotect the device from write  
operation by Write Protect (WP#) Pin  
• Cost Effective Sector/Block Architecture  
- 2Mb : Uniform 4KByte sectors / Four uniform  
64KByte blocks  
- 4Mb : Uniform 4KByte sectors / Eight uniform  
64KByte blocks  
• Software Write Protection  
- The Block Protect (BP2, BP1, BP0) bits allow  
partial or entire memory to be configured as read-  
only  
• High Product Endurance  
- Guaranteed 200,000 program/erase cycles per  
single sector  
- Minimum 20 years data retention  
• Serial Peripheral Interface (SPI) Compatible  
- Supports single- or dual-output  
- Supports SPI Modes 0 and 3  
- Maximum 30 MHz clock rate for normal read  
- Maximum 80 MHz clock rate for fast read  
• Industrial Standard Pin-out and Package  
- 8-pin SOIC 208mil  
- 8-pin SOIC 150mil  
- 8-pin VVSOP 150mil  
- 8-pin WSON  
• Page Program (up to 256 Bytes) Operation  
- Typical 2 ms per page program  
- KGD (Call Factory)  
• Sector, Block or Chip Erase Operation  
- Lead-free (Pb-free) package  
- Automotive Temperature Ranges Available  
- Typical 1.7 ms sector, block or chip erase  
GENERAL DESCRIPTION  
The IS25WD020/040 are 2 Mbit / 4Mbit Serial Peripheral Interface (SPI) Flash memories, providing single- or  
dual-output. The devices are designed to support a 30 MHz fclock rate in normal read mode, and 80 MHz in fast  
read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage  
ranging from 1.65 Volt to 1.95 Volt, to perform read, erase and program operations. The devices can be  
programmed in standard EPROM programmers.  
The IS25WD020/040 are accessed through a 4-wire SPI Interface consisting of Serial Data Input/Output (SlO),  
Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins. They comply with all recognized  
command codes and operations. The dual-output fast read operation provides and effective serial data rate of  
160MHz.  
The devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in  
one program operation. These devices are divided into uniform 4 KByte sectors or uniform 64 KByte blocks.  
The IS25WD020/040 are manufactured on pFLASH™’s advanced non-volatile technology. The devices are  
offered in 8-pin SOIC 208mil, 8-pin SOIC 150mil, 8-pin VVSOP 150mil and 8-pin WSON. The devices operate at  
wide temperatures between -40°C to +105°C.  
Integrated Silicon Solution, Inc.- www.issi.com  
Rev. G  
1
11/15/2016  
1234567...34

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