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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRLI640G-019PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-024 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-024PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-029PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-030 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-030PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-031 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640G-031PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRLI640GPBF | VISHAY |
获取价格 |
Power MOSFET |
|
| IRLI640GPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
|
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