Datasheet > IRLIB4343

IRLIB4343

更新时间： 2024-11-18 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	233K
描述
DIGITAL AUDIO MOSFET

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IRLIB4343 数据手册

PD - 95857A

DIGITAL AUDIO MOSFET

IRLIB4343

Features

Advanced Process Technology

Key Parameters

Key Parameters Optimized for Class-D Audio

AmplifierApplications

V_DS

°C

Low R_DSONfor Improved Efficiency

Low Q_gand Q_swfor Better THD and Improved

Efficiency

Low Q_rrfor Better THD and Lower EMI

175°COperatingJunctionTemperaturefor

Ruggedness

R_DS(ON)typ. @ V_GS= 10V

R_DS(ON)typ. @ V_GS= 4.5V

Q_gtyp.

T_Jmax

175

Repetitive Avalanche Capability for Robustness and

Reliability

TO-220Full-Pak

Description

This Digital Audio HEXFET^®is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

V_GS

±20

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

P_D@T_C= 100°C

Power Dissipation

0.26

Linear Derating Factor

W/°C

°C

T_J

-40 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Mounting torque, 6-32 or M3 screw

10lb in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.84

Units

°C/W

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient

Notes through ꢀ are on page 7

www.irf.com

3/31/04

12 3 4 5 6 7

中文翻译

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