是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PXFM-X7 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
其他特性: | FAST | 外壳连接: | ISOLATED |
标称电路换相断开时间: | 18 µs | 配置: | SERIES CONNECTED, 2 ELEMENTS |
关态电压最小值的临界上升速率: | 400 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
JESD-30 代码: | R-PXFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大均方根通态电流: | 314 A |
重复峰值关态漏电流最大值: | 30000 µA | 断态重复峰值电压: | 200 V |
重复峰值反向电压: | 200 V | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | 40 | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRKTF200-02FP | ETC |
获取价格 |
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) |
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IRKTF200-02FPN | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 314A I(T)RMS, 200V V(DRM), 200V V(RRM), 2 Element |
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IRKTF200-02FPNPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 314A I(T)RMS, 200V V(DRM), 200V V(RRM), 2 Element |
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IRKTF200-02GJ | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 200V V(DRM), 200V V(RRM), 2 Ele |
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IRKTF200-02GJPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 444A I(T)RMS, 200V V(DRM), 200V V(RRM), 2 Element, POWER, MA |
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IRKTF200-02GK | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 200V V(DRM), 200V V(RRM), 2 Ele |
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IRKTF200-02GKPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 444A I(T)RMS, 200V V(DRM), 200V V(RRM), 2 Element, POWER, MA |
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IRKTF200-02GP | ETC |
获取价格 |
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) |
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IRKTF200-02GPPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 444A I(T)RMS, 200V V(DRM), 200V V(RRM), 2 Element, POWER, MA |
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IRKTF200-02HJ | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 200V V(DRM), 200V V(RRM), 2 Ele |
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