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IRKT26/08 PDF预览

IRKT26/08

更新时间: 2024-09-13 14:34:03
品牌 Logo 应用领域
威世 - VISHAY 局域网栅极
页数 文件大小 规格书
1页 29K
描述
Silicon Controlled Rectifier, 60 A, 800 V, SCR, TO-240AA

IRKT26/08 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.72其他特性:UL APPROVED
外壳连接:ISOLATED配置:SERIES CONNECTED, 2 ELEMENTS
最大直流栅极触发电流:150 mAJEDEC-95代码:TO-240AA
JESD-30 代码:R-PUFM-X3元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:60 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

IRKT26/08 数据手册

  

与IRKT26/08相关器件

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IRKT26/08A INFINEON

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ADD-A-pakTM GEN V Power Modules
IRKT26/08APBF INFINEON

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Silicon Controlled Rectifier, 42.39A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240A
IRKT26/08AS90 INFINEON

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THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT26/08P VISHAY

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Silicon Controlled Rectifier, 60A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 2 Eleme
IRKT26/08S90 INFINEON

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Silicon Controlled Rectifier, 60A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 2 Eleme
IRKT26/08S90P VISHAY

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Silicon Controlled Rectifier, 60A I(T)RMS, 27000mA I(T), 800V V(DRM), 800V V(RRM), 2 Eleme
IRKT26/10 INFINEON

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Silicon Controlled Rectifier, 60A I(T)RMS, 25000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Ele
IRKT26/10A INFINEON

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ADD-A-pakTM GEN V Power Modules
IRKT26/10APBF INFINEON

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Silicon Controlled Rectifier, 42.39A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-24
IRKT26/10AS90 INFINEON

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THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR