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IRKJ235-08-NPBF PDF预览

IRKJ235-08-NPBF

更新时间: 2024-09-17 10:32:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 187K
描述
230A, 800V, SILICON, RECTIFIER DIODE, POWER, INT-A-PAK-3

IRKJ235-08-NPBF 数据手册

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I27096 rev. B 10/99  
IRK. SERIES  
INT-A-pakä Power Modules  
STANDARD RECOVERY DIODES  
Features  
High voltage  
Electrically isolated base plate  
165 A  
195 A  
230 A  
3000 V  
isolating voltage  
RMS  
Industrial standard package  
Simplified mechanical designs, rapid assembly  
High surge capability  
Large creepage distances  
UL E78996 approved  
Description  
These series of INT-A-paks uses high voltage power  
diodes in two basic configurations. The semiconductors  
are electrically isolated from the metal base, allowing  
common heatsinks and compact assemblies to be built.  
They can be interconnected to form single phase or three  
phase bridges and the single diode module can be used  
in conjunction with the thyristor modules as a freewheel  
diode. These modules are intended for general purpose  
applications such as battery chargers, welders and plat-  
ing equipment and where high voltage and high current  
are required (motor drives, etc.).  
Major Ratings and Characteristics  
IRK.165.. IRK.195.. IRK.235..  
IRK.166.. IRK.196.. IRK.236..  
Parameters  
Units  
IF(AV)  
165  
100  
260  
4000  
4200  
80  
195  
100  
230  
100  
A
°C  
A
@ TC  
IF(RMS)  
305  
360  
IFSM @50Hz  
4750  
4980  
113  
6540  
6850  
214  
A
@60Hz  
2
A
2
I t  
@50Hz  
@60Hz  
KA s  
2
73  
103  
195  
KA s  
2
2
I t  
1130  
1130  
2140  
KA s  
VRRM  
TJ  
upto2000 upto2000 upto2400  
-40 to 150  
V
range  
°C  
www.irf.com  
1

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