型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHM53Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) | |
IRHM53Z60DPBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM53Z60PBF | INFINEON |
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暂无描述 | |
IRHM54064 | INFINEON |
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RADIATION HARDENED POWER MOSFET | |
IRHM54064DPBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM54064PBF | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM54064U | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRHM54160 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE | |
IRHM54160D | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me | |
IRHM54160DPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me |