Datasheet > IRHM53260U

IRHM53260U

更新时间： 2024-11-28 05:34:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	114K
描述
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM53260U 数据手册

PD - 91862D

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

IRHM57260

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHM57260

IRHM53260

IRHM54260

IRHM58260

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.049Ω 35A*

1000K Rads (Si) 0.050Ω 35A*

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

up to an LET of 80 (MeV/(mg/cm²)). The combination n Repetitive Avalanche Ratings

of low R

and low gate charge reduces the power n Dynamic dv/dt Ratings

DS(on)

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Simple Drive Requirements

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

140

250

2.0

±20

@ T = 25°C

W/°C

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by internal wire diameter

For footnotes refer to the last page

www.irf.com

01/30/03

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHM53260U相关器件

型号	品牌	获取价格	描述	数据表
IRHM53Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
IRHM53Z60DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
IRHM53Z60PBF	INFINEON	获取价格	暂无描述
IRHM54064	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
IRHM54064DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRHM54064PBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRHM54064U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRHM54160	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM54160D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me
IRHM54160DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me

与IRHM53260U相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

60

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM53260U

IRHM53260U 数据手册

与IRHM53260U相关器件

与IRHM53260U相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM53260U

IRHM53260U 数据手册

与IRHM53260U相关器件

与IRHM53260U相关文章

您还可以找

您在本页遇到什么问题？