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IRHM53260U PDF预览

IRHM53260U

更新时间: 2024-11-10 05:34:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 114K
描述
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

IRHM53260U 数据手册

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PD - 91862D  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
IRHM57260  
200V, N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHM57260  
IRHM53260  
IRHM54260  
IRHM58260  
100K Rads (Si)  
300K Rads (Si)  
600K Rads (Si)  
0.04935A*  
0.04935A*  
0.04935A*  
1000K Rads (Si) 0.05035A*  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
Features:  
n
n
n
Single Event Effect (SEE) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
up to an LET of 80 (MeV/(mg/cm2)). The combination n Repetitive Avalanche Ratings  
of low R  
and low gate charge reduces the power n Dynamic dv/dt Ratings  
DS(on)  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermatically Sealed  
Electically Isolated  
Ceramic Eyelets  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
35*  
32  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
140  
250  
2.0  
±20  
DM  
@ T = 25°C  
P
D
W
W/°C  
V
C
V
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
35  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
oC  
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
g
* Current is limited by internal wire diameter  
For footnotes refer to the last page  
www.irf.com  
1
01/30/03  

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