Datasheet > 晶体管 > 功率场效应晶体管> IRHM57160SCSPBF

IRHM57160SCSPBF

更新时间： 2024-11-24 13:01:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	121K
描述
Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHM57160SCSPBF 数据手册

PD - 93784F

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

IRHM57160

100V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHM57160

IRHM53160

IRHM54160

IRHM58160

100K Rads (Si)

300K Rads (Si)

600K Rads (Si)

0.018Ω 35A*

1000K Rads (Si) 0.019Ω 35A*

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

up to an LET of 80 (MeV/(mg/cm²)). The combination n Repetitive Avalanche Ratings

of low R

and low gate charge reduces the power n Dynamic dv/dt Ratings

losses in switching applications such as DC to DC n Simple Drive Requirements

DS(on)

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

35*

140

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

250

W/°C

2.0

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

3.4

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

* Current is limited by internal wire diameter

For footnotes refer to the last page

www.irf.com

08/07/02

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHM57160SCSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHM57160U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me
IRHM57160UPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Me
IRHM57260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM57260D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Me
IRHM57260DPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Me
IRHM57260SE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM57260SEDPBF	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Me
IRHM57260SESCSPBF	INFINEON	获取价格	暂无描述
IRHM57260SEUPBF	INFINEON	获取价格	暂无描述
IRHM57260U	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Me

与IRHM57160SCSPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM57160SCSPBF

IRHM57160SCSPBF 数据手册

与IRHM57160SCSPBF相关器件

与IRHM57160SCSPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHM57160SCSPBF

IRHM57160SCSPBF 数据手册

与IRHM57160SCSPBF相关器件

与IRHM57160SCSPBF相关文章

您还可以找

您在本页遇到什么问题？