Datasheet > IRFZ14_11

IRFZ14_11

更新时间： 2024-11-21 11:09:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1588K
描述
Power MOSFET

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中文翻译

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IRFZ14_11 数据手册

IRFZ14, SiHFZ14

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

Available

• 175 °C Operating Temperature

• Fast Switching

_DS(on)()

V_GS= 10 V

0.20

RoHS*

Q_g(Max.) (nC)

3.1

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

5.8

Configuration

Single

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRFZ14PbF

SiHFZ14-E3

IRFZ14

Lead (Pb)-free

SnPb

SiHFZ14

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage^f

Gate-Source Voltage^f

V_DS

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

7.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.29

W/°C

E_AS

P_D

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

for 10 s

4.5

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V; starting T_J= 25 °C, L = 1.47 mH, R_g= 25 , I_AS= 8 A (see fig. 12).

c. I_SD 10 A, dI/dt  90 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91289

S11-0517-Rev. C, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ14_11相关器件

型号	品牌	获取价格	描述	数据表
IRFZ14-001	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-003	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-004	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-005	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-005PBF	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-006	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-006PBF	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-009PBF	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFZ14-010	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal

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