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IRFWI550A

更新时间: 2024-09-15 22:14:07
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飞兆/仙童 - FAIRCHILD /
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描述
Advanced Power MOSFET

IRFWI550A 数据手册

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IRFW/I550A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.04  
ID = 40 A  
Improved Gate Charge  
Extended Safe Operating Area  
D2-PAK  
I2-PAK  
O
175 C Operating Temperature  
2
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
W
Lower RDS(ON) : 0.032 (Typ.)  
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Value  
100  
40  
Units  
VDSS  
V
O
Continuous Drain Current (TC=25 C)  
ID  
A
O
Continuous Drain Current (TC=100 C)  
28.3  
160  
1
IDM  
VGS  
EAS  
IAR  
Drain Current-Pulsed  
A
V
O
+
_
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
20  
2
640  
40  
mJ  
A
O
1
O
EAR  
dv/dt  
1
Repetitive Avalanche Energy  
16.7  
6.5  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
O
O
*
Total Power Dissipation (TA=25  
)
)
C
C
3.8  
O
PD  
Total Power Dissipation (T =25  
167  
1.11  
W
C
O
Linear Derating Factor  
W/ C  
Operating Junction and  
Storage Temperature Range  
TJ , TSTG  
- 55 to +175  
300  
O
C
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
Rq  
Junction-to-Case  
--  
--  
--  
0.9  
40  
JC  
O
Rq  
*
Junction-to-Ambient  
Junction-to-Ambient  
C /W  
JA  
Rq  
62.5  
JA  
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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