Datasheet > IRFR9014PBF

IRFR9014PBF

更新时间： 2024-10-03 02:55:39

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
7页	4533K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR9014PBF 数据手册

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

0.50

RoHS*

• Surface Mount (IRFR9014/SiHFR9014)

COMPLIANT

Q_g(Max.) (nC)

• Straight Lead (IRFU9014/SiHFU9014)

_gs(nC)

3.8

• Available in Tape and Reel

Q_gd(nC)

5.1

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

(TO-252)

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

P-Channel MOSFET

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9014TRLPbF^a

SiHFR9014TL-E3^a

IRFR9014TRL^a

SiHFR9014TL^a

DPAK (TO-252)

IRFR9014TRPbF^a

SiHFR9014T-E3^a

IRFR9014TR^a

IPAK (TO-251)

IRFU9014PbF

SiHFU9014-E3

IRFU9014

IRFR9014PbF

SiHFR9014-E3

IRFR9014

Lead (Pb)-free

SnPb

SiHFR9014

SiHFR9014T^a

SiHFU9014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 60

V_GS

_C= 25 °C

- 5.1

- 3.2

- 20

Continuous Drain Current

V_GSat 5.0 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

0.020

140

E_AS

I_AR

- 5.1

2.5

E_AR

T_C= 25 °C

P_D

T_A= 25 °C

2.5

dV/dt

- 4.5

- 55 to + 150

V/ns

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

Soldering Recommendations (Peak Temperature)

for 10 s

260^d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 6.3 mH, R_G= 25 Ω, I_AS= - 5.1 A (see fig. 12).

c. I_SD≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与IRFR9014PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR9014-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.3A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9014TR	VISHAY	获取价格	Power MOSFET
IRFR9014TRA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRL	VISHAY	获取价格	Power MOSFET
IRFR9014TRL	INFINEON	获取价格	HEXFET Power MOSFET
IRFR9014TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRLPBF	VISHAY	获取价格	Power MOSFET
IRFR9014TRLPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9014TRPBFA	KERSEMI	获取价格	Power MOSFET

与IRFR9014PBF相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR9014PBF

IRFR9014PBF 数据手册

与IRFR9014PBF相关器件

与IRFR9014PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR9014PBF

IRFR9014PBF 数据手册

与IRFR9014PBF相关器件

与IRFR9014PBF相关文章

您还可以找

您在本页遇到什么问题？