IRFR9020PBF

更新时间： 2024-10-02 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1210K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFR9020PBF 数据手册

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mountable (Order As IRFR9020/SiHFR9020)

PRODUCT SUMMARY

V_DS(V)

- 50

Available

• Straight Lead Option (Order As IRFU9020/SiHFU9020)

_DS(on)(Ω)

V_GS= - 10 V

0.28

RoHS*

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

6.5

COMPLIANT

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Ease of Paralleling

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance combined

with high transconductance; superior reverse energy and

diode recovery dV/dt.

(TO-252)

(TO-251)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

P-Channel MOSFET

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The TO-252

surface mount package brings the advantages of Power

MOSFET’s to high volume applications where PC Board

surface mounting is desirable. The surface mount option

IRFR9020/SiHFR9020 is provided on 16mm tape. The

straight lead option IRFR9020/SiHFR9020 of the device is

called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9020PbF

SiHFR9020-E3

IRFR9020

DPAK (TO-252)

IRFR9020TRLPbF^a

SiHFR9020TL-E3^a

IRFR9020TRL^a

SiHFR9020TL^a

IPAK (TO-251)

IRFU9020PbF

SiHFU9020-E3

IRFU9020

IRFR9020TRPbF^a

SiHFR9020T-E3^a

IRFR9020TR^a

Lead (Pb)-free

SnPb

SiHFR9020

SiHFR9020T^a

SiHFU9020

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 50

V_GS

_C= 25 °C

- 9.9

- 6.3

- 40

0.33

440

- 9.9

4.2

Continuous Drain Current

_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90350

S-Pending-Rev. A, 10-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7...9

中文翻译

下载PDF

IRFR9020PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFR9020TRPBF	VISHAY	类似代替	Power MOSFET

与IRFR9020PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR9020-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 9.9A I(D), 50V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRFR9020TR	VISHAY	获取价格	Power MOSFET
IRFR9020TRA	KERSEMI	获取价格	Power MOSFET
IRFR9020TRL	VISHAY	获取价格	Power MOSFET
IRFR9020TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9020TRLPBF	VISHAY	获取价格	Power MOSFET
IRFR9020TRLPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9020TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9020TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9020TRR	INFINEON	获取价格	Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Met

与IRFR9020PBF相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR9020PBF

IRFR9020PBF 数据手册

IRFR9020PBF 替代型号

与IRFR9020PBF相关器件

与IRFR9020PBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFR9020PBF

IRFR9020PBF 数据手册

IRFR9020PBF 替代型号

与IRFR9020PBF相关器件

与IRFR9020PBF相关文章

您还可以找

您在本页遇到什么问题？