IRFR9014TRL

更新时间： 2024-10-02 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	2013K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFR9014TRL 数据手册

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 60

Available

• Repetitive Avalanche Rated

R_DS(on)(Ω)

V_GS= - 10 V

0.50

RoHS*

• Surface Mount (IRFR9014/SiHFR9014)

COMPLIANT

Q_g(Max.) (nC)

• Straight Lead (IRFU9014/SiHFU9014)

_gs(nC)

_gd(nC)

3.8

• Available in Tape and Reel

5.1

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

DPAK

IPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

(TO-252)

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

P-Channel MOSFET

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9014TRLPbF^a

SiHFR9014TL-E3^a

IRFR9014TRL^a

SiHFR9014TL^a

DPAK (TO-252)

IRFR9014TRPbF^a

SiHFR9014T-E3^a

IRFR9014TR^a

IPAK (TO-251)

IRFU9014PbF

SiHFU9014-E3

IRFU9014

IRFR9014PbF

SiHFR9014-E3

IRFR9014

Lead (Pb)-free

SnPb

SiHFR9014

SiHFR9014T^a

SiHFU9014

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 60

V_GS

_C= 25 °C

- 5.1

- 3.2

- 20

Continuous Drain Current

_GSat 5.0 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.20

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

0.020

140

E_AS

I_AR

- 5.1

2.5

E_AR

T_C= 25 °C

P_D

T_A= 25 °C

2.5

dV/dt

- 4.5

- 55 to + 150

V/ns

Operating Junction and Storage Temperature Range

T_J, T_stg

°C

Soldering Recommendations (Peak Temperature)

for 10 s

260^d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 6.3 mH, R_G= 25 Ω, I_AS= - 5.1 A (see fig. 12).

c. I_SD≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91277

S-81394-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFR9014TRL 替代型号

型号	品牌	替代类型	描述	数据表
IRFR9014PBF	VISHAY	完全替代	Power MOSFET

与IRFR9014TRL相关器件

型号	品牌	获取价格	描述	数据表
IRFR9014TRLA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRLPBF	VISHAY	获取价格	Power MOSFET
IRFR9014TRLPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRPBF	VISHAY	获取价格	Power MOSFET
IRFR9014TRPBFA	KERSEMI	获取价格	Power MOSFET
IRFR9014TRR	KERSEMI	获取价格	Power MOSFET
IRFR9014TRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9014TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9015	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4.5A I(D) \| TO-252AA
IRFR9015-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.5A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta

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