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IRFP22N60KPBF PDF预览

IRFP22N60KPBF

更新时间: 2024-11-27 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 150K
描述
Power MOSFET

IRFP22N60KPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-247AC
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:0.79
Is Samacsys:N雪崩能效等级(Eas):380 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):370 W
最大脉冲漏极电流 (IDM):88 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFP22N60KPBF 数据手册

 浏览型号IRFP22N60KPBF的Datasheet PDF文件第2页浏览型号IRFP22N60KPBF的Datasheet PDF文件第3页浏览型号IRFP22N60KPBF的Datasheet PDF文件第4页浏览型号IRFP22N60KPBF的Datasheet PDF文件第5页浏览型号IRFP22N60KPBF的Datasheet PDF文件第6页浏览型号IRFP22N60KPBF的Datasheet PDF文件第7页 
IRFP22N60K, SiHFP22N60K  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Hard Switching Primary or PFS Switch  
PRODUCT SUMMARY  
VDS (V)  
600  
Available  
• Low Gate Charge Qg Results in Simple Drive  
Requirement  
R
DS(on) (Ω)  
VGS = 10 V  
0.24  
RoHS*  
Qg (Max.) (nC)  
150  
45  
COMPLIANT  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
Q
Q
gs (nC)  
gd (nC)  
76  
• Fully Characterized Capacitance and Avalanche Voltage  
and Current  
Configuration  
Single  
D
• Enhanced Body Diode dV/dt Capability  
• Lead (Pb)-free Available  
TO-247  
BENEFITS  
G
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
• Motor Drive  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-247  
IRFP22N60KPbF  
SiHFP22N60K-E3  
IRFP22N60K  
Lead (Pb)-free  
SnPb  
SiHFP22N60K  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
600  
V
VGS  
30  
TC = 25 °C  
TC =100°C  
22  
Continuous Drain Current  
VGS at 10 V  
ID  
14  
A
Pulsed Drain Currenta  
IDM  
88  
Linear Derating Factor  
2.9  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
380  
22  
37  
EAR  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
370  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
15  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 22 A (see fig. 12).  
c. ISD 22 A, dI/dt 360 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91208  
S-81274-Rev. A, 16-Jun-08  
www.vishay.com  
1

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