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IRFIZ48G-017 PDF预览

IRFIZ48G-017

更新时间: 2024-11-30 03:09:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 47K
描述
Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFIZ48G-017 数据手册

  

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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ48G-019 INFINEON

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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
IRFIZ48G-019PBF INFINEON

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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
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Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)