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IRFIZ46NPBF

更新时间： 2024-11-29 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 225K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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IRFIZ46NPBF 数据手册

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PD - 95595  
IRFIZ46NPbF  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l IsolatedPackage  
l High Voltage Isolation = 2.5KVRMS ꢀ  
l Sink to Lead Creepage Dist. = 4.8mm  
l Fully Avalanche Rated  
D
VDSS = 55V  
l Lead-Free  
RDS(on) = 0.020Ω  
G
Description  
ID = 33A  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowestpossibleon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
device for use in a wide variety of applications.  
S
The TO-220 Fullpak eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The moulding compound used provides a high isolation  
capability and a low thermal resistance between the tab  
and external heatsink. This isolation is equivalent to using  
a 100 micron mica barrier with standard TO-220 product.  
The Fullpak is mounted to a heatsink using a single clip or  
by a single screw fixing.  
TO-220 FULLPAK  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current †  
33  
23  
A
180  
PD @TC = 25°C  
Power Dissipation  
45  
W
W/°C  
V
Linear Derating Factor  
0.3  
VGS  
EAS  
Gate-to-Source Voltage  
±20  
Single Pulse Avalanche Energy ‚†  
Avalanche Current†  
230  
mJ  
IAR  
16  
4.5  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy†  
Peak Diode Recovery dv/dt ƒ†  
Operating Junction and  
mJ  
5.0  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (1.6mm from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Min.  
––––  
––––  
Typ.  
––––  
––––  
Max.  
3.3  
Units  
RθJC  
RθJA  
Junction-to-Case  
Junction-to-Ambient  
65  
°C/W  
www.irf.com  
1
07/23/04  
1234567...9

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