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IRFIZ14G PDF预览

IRFIZ14G

更新时间: 2024-09-15 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 1021K
描述
Power MOSFET

IRFIZ14G 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07Is Samacsys:N
雪崩能效等级(Eas):47 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):27 W最大脉冲漏极电流 (IDM):32 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFIZ14G 数据手册

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IRFIZ14G, SiHFIZ14G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Isolated Package  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
R
DS(on) (Ω)  
VGS = 10 V  
0.20  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
11  
3.1  
• Sink to Lead Creepage Distance = 4.8 mm  
• 175 °C Operating Temperature  
• Dynamic dv/dt Rating  
Q
Q
gs (nC)  
gd (nC)  
5.8  
Configuration  
Single  
• Low Thermal Resistance  
D
TO-220 FULLPAK  
• Lead (Pb)-free Available  
DESCRIPTION  
G
Third deneration Power MOSFETs from Vishay provides the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost  
effectiveness.  
The TO-220 Fullpak eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
Fullpak is mounted to a heatsink using a single clip or by a  
single screw fixing.  
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFIZ14GPbF  
SiHFIZ14G-E3  
IRFIZ14G  
Lead (Pb)-free  
SnPb  
SiHFIZ14G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
20  
V
TC = 25 °C  
TC =100°C  
8.0  
Continuous Drain Current  
VGS at 10 V  
ID  
A
5.7  
Pulsed Drain Currenta  
IDM  
32  
Linear Derating Factor  
Single Pulse Avalanche Energyb  
0.18  
W/°C  
mJ  
EAS  
PD  
47  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
27  
4.5  
W
dV/dt  
TJ, Tstg  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
°C  
for 10 s  
10  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 856 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).  
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90224  
www.vishay.com  
1
S-Pending-Rev. A, 16-Jun-08  
WORK-IN-PROGRESS  

IRFIZ14G 替代型号

型号 品牌 替代类型 描述 数据表
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