Datasheet > IRFIZ14G_10

IRFIZ14G_10

更新时间： 2024-09-15 11:09:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1005K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFIZ14G_10 数据手册

IRFIZ14G, SiHFIZ14G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

_DS(on)()

Q_g(Max.) (nC)

_gs(nC)

V_GS= 10 V

0.20

RoHS*

COMPLIANT

3.1

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dv/dt Rating

Q_gd(nC)

5.8

Configuration

Single

• Low Thermal Resistance

TO-220 FULLPAK

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFIZ14GPbF

SiHFIZ14G-E3

IRFIZ14G

Lead (Pb)-free

SnPb

SiHFIZ14G

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

8.0

Continuous Drain Current

V_GSat 10 V

I_D

5.7

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

0.18

W/°C

E_AS

P_D

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

T_C= 25 °C

4.5

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 1.47 mH, R_g= 25 , I_AS= 8.0 A (see fig. 12).

c. I_SD10 A, dI/dt 90 A/µs, V_DDV_DS, T_J175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90224

S10-2325-Rev. C, 11-Oct-10

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRFIZ14G_10相关器件

型号	品牌	获取价格	描述	数据表
IRFIZ14G-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-003	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-004	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-005	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-006	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-010	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFIZ14G-011	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-

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