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IRFIZ14G-031 PDF预览

IRFIZ14G-031

更新时间: 2024-11-06 20:51:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关晶体管
页数 文件大小 规格书
1页 47K
描述
Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFIZ14G-031 数据手册

  

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Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-
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IRFIZ24-001 INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24-001PBF INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24-002 INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24-002PBF INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24-003 INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFIZ24-003PBF INFINEON

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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal