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IRFI9640G-107 PDF预览

IRFI9640G-107

更新时间： 2024-09-14 21:04:19
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 800K
描述
Power Field-Effect Transistor, 2A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3

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IRFI9640G-107 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.62雪崩能效等级（Eas）：100 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (ID)：2 A
最大漏源导通电阻：3 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：8 A认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRFI9640G-107 数据手册

 浏览型号IRFI9640G-107的Datasheet PDF文件第2页浏览型号IRFI9640G-107的Datasheet PDF文件第3页浏览型号IRFI9640G-107的Datasheet PDF文件第4页浏览型号IRFI9640G-107的Datasheet PDF文件第5页浏览型号IRFI9640G-107的Datasheet PDF文件第6页浏览型号IRFI9640G-107的Datasheet PDF文件第7页 
IRFI9610G, SiHFI9610G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Isolated Package  
PRODUCT SUMMARY  
VDS (V)  
- 200  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
Available  
RDS(on) (Ω)  
VGS = - 10 V  
3.0  
RoHS*  
COMPLIANT  
• Sink to Lead Creepage Distance = 4.8 mm  
• P-Channel  
Qg (Max.) (nC)  
13  
3.2  
Q
Q
gs (nC)  
gd (nC)  
• Dynamic dV/dt Rating  
7.3  
• Low Thermal Resistance  
• Lead (Pb)-free Available  
Configuration  
Single  
S
TO-220 FULLPAK  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The moulding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
D
P-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFI9640GPbF  
SiHFI9640G-E3  
IRFI9640G  
Lead (Pb)-free  
SnPb  
SiHFI9640G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
LIMIT  
- 200  
20  
UNIT  
VDS  
V
VGS  
T
C = 25 °C  
- 2.0  
- 1.3  
- 8.0  
0.22  
100  
Continuous Drain Current  
VGS at - 10 V  
ID  
TC =100°C  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
- 2.0  
2.7  
EAR  
mJ  
W
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
PD  
27  
dV/dt  
TJ, Tstg  
- 11  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 51 mH, RG = 25 Ω, IAS = - 2.0 A (see fig. 12).  
c. ISD ≤ - 2.0 A, dI/dt ≤ - 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91165  
S09-0011-Rev. A, 19-Jan-09  
www.vishay.com  
1
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