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IRFI644G-012PBF PDF预览

IRFI644G-012PBF

更新时间: 2024-11-29 19:06:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关晶体管
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI644G-012PBF 数据手册

  

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-029 INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-029PBF INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-030 INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me