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IRFI644G-018PBF PDF预览

IRFI644G-018PBF

更新时间: 2024-11-29 19:06:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关晶体管
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI644G-018PBF 数据手册

  

与IRFI644G-018PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFI644G-019PBF INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-024 INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-024PBF INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-029 INFINEON

获取价格

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-029PBF INFINEON

获取价格

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-030 INFINEON

获取价格

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-030PBF INFINEON

获取价格

Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644G-031 INFINEON

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Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Me
IRFI644GPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFI644GPBF VISHAY

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Power MOSFET