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IRFHS9351TRPBF PDF预览

IRFHS9351TRPBF

更新时间: 2024-01-05 09:32:36
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
9页 293K
描述
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-6

IRFHS9351TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.15其他特性:HIGH RELIABILITY
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5.1 A最大漏极电流 (ID):2.3 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFHS9351TRPBF 数据手册

 浏览型号IRFHS9351TRPBF的Datasheet PDF文件第1页浏览型号IRFHS9351TRPBF的Datasheet PDF文件第3页浏览型号IRFHS9351TRPBF的Datasheet PDF文件第4页浏览型号IRFHS9351TRPBF的Datasheet PDF文件第5页浏览型号IRFHS9351TRPBF的Datasheet PDF文件第6页浏览型号IRFHS9351TRPBF的Datasheet PDF文件第7页 
IRFHS9351PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Conditions  
VGS = 0V, ID = -250μA  
Parameter  
Drain-to-Source Breakdown Voltage  
Min.  
Typ.  
–––  
0.02  
135  
235  
-1.8  
-4.6  
–––  
–––  
–––  
–––  
–––  
1.9  
3.7  
0.6  
1.1  
17  
Max.  
–––  
–––  
170  
290  
-2.4  
–––  
-1.0  
-150  
-100  
100  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Units  
V
BVDSS  
-30  
–––  
–––  
–––  
-1.3  
–––  
–––  
–––  
–––  
–––  
2.4  
Reference to 25°C, ID = -1mA  
VGS = -10V, ID = -3.1A  
VDSS/ TJ  
Breakdown Voltage Temp. Coefficient  
V/°C  
RDS(on)  
Static Drain-to-Source On-Resistance  
m
VGS = -4.5V, ID = -2.5A  
VGS(th)  
VGS(th)  
IDSS  
Gate Threshold Voltage  
V
VDS = VGS, ID = -10μA  
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
mV/°C  
VDS = -24V, VGS = 0V  
VDS = -24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
μA  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
nA  
V
GS = 20V  
VDS = -10V, ID = -3.1A  
gfs  
Qg  
S
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
nC  
VDS = -15V,VGS = -4.5V,ID = - 3.1A  
Qg  
V
GS = -10V  
VDS = -15V  
D = -3.1A  
Total Gate Charge  
Qgs  
Qgd  
RG  
td(on)  
tr  
nC  
Gate-to-Source Charge  
Gate-to-Drain Charge  
Gate R esistance  
I
VDD = -15V, VGS = -4.5V  
ID = -3.1A  
Turn-On Delay Time  
Rise Time  
8.3  
30  
ns  
pF  
td(off)  
tf  
RG = 1.8  
Turn-Off Delay Time  
Fall Time  
6.3  
7.9  
160  
39  
See Figs. 19a & 19b  
Ciss  
Coss  
Crss  
VGS = 0V  
Input Capacitance  
VDS = -25V  
ƒ = 1.0KHz  
Output Capacitance  
Reverse Transfer Capacitance  
26  
Diode Characteristics  
Parameter  
Min.  
Typ.  
Max.  
Units  
Conditions  
IS  
Continuous Source Current  
MOSFET symbol  
D
S
–––  
–––  
-5.1  
showing the  
(Body Diode)  
A
G
ISM  
integral reverse  
p-n junction diode.  
Pulsed Source Current  
(Body Diode)  
–––  
–––  
–––  
–––  
-20  
VSD  
Diode Forward Voltage  
-1.2  
V
T
T
= 25°C, I = -3.1A, V  
= 0V  
J
S
GS  
trr  
= 25°C, I = -3.1A, VDD = -15V  
F
Reverse Recovery Time  
–––  
–––  
20  
42  
30  
63  
ns  
J
Qrr  
di/dt = 370/μs  
Reverse Recovery Charge  
nC  
Thermal Resistance  
Typ.  
–––  
–––  
Max.  
19  
Parameter  
Units  
Junction-to-Case  
R
R
R
R
JC (Bottom)  
JC (Top)  
Junction-to-Case  
170  
90  
°C/W  
Junction-to-Ambient  
JA  
JA  
Junction-to-Ambient (t<10s)  
–––  
75  
Notes:  
 Repetitive rating; pulse width limited by max. junction temperature.  
‚ Current limited by package. .  
ƒ Pulse width 400μs; duty cycle 2%.  
„ When mounted on 1 inch square copper board.  
Rθ is measured at TJ of approximately 90°C.  
† For DESIGN AID ONLY, not subject to production testing.  
.
2
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
Ma2y1, 2014  

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