是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.6 | Is Samacsys: | N |
雪崩能效等级(Eas): | 700 mJ | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF9640-005 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
IRF9640-006PBF | VISHAY |
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Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
IRF9640-009PBF | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
IRF9640F | INFINEON |
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Power Field-Effect Transistor, 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9640FPBF | INFINEON |
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Power Field-Effect Transistor, 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9640FXPBF | INFINEON |
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Power Field-Effect Transistor, 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IRF9640L | VISHAY |
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Power MOSFET | |
IRF9640L | NJSEMI |
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Trans MOSFET P-CH 200V 11A 3-Pin(3+Tab) TO-220AB | |
IRF9640LPBF | VISHAY |
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Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta | |
IRF9640PBF | INFINEON |
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Hexfet Power Mosfet |