IRF630S, SiHF630S
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
• Surface-mount
D
D2PAK (TO-263)
• Available in tape and reel
• Dynamic dv/dt rating
• Repetitive avalanche rated
• Fast switching
Available
Available
G
• Ease of paralleling
• Simple drive requirements
D
G
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
S
S
N-Channel MOSFET
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
200
DESCRIPTION
RDS(on) ()
VGS = 10 V
0.40
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Qg max. (nC)
43
7.0
Qgs (nC)
gd (nC)
Q
23
The D2PAK (TO-263) is a surface-mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface-mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical
surface-mount application.
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHF630S-GE3
IRF630SPbF
D2PAK (TO-263)
SiHF630STRL-GE3 a
IRF630STRLPbF a
D2PAK (TO-263)
SiHF630STRR-GE3 a
IRF630STRRPbF a
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
200
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
9.0
5.7
Continuous drain current
VGS at 10 V
ID
TC = 100 °C
A
Pulsed drain current a
IDM
36
Linear derating factor
0.59
0.025
250
W/°C
Linear derating factor (PCB mount) e
Single pulse avalanche energy b
Repetitive avalanche current a
EAS
IAR
mJ
A
9.0
Repetitive avalanche energy a
EAR
7.4
mJ
Maximum power dissipation
Maximum power dissipation (PCB mount) e
Peak diode recovery dv/dt c
TC = 25 °C
TA = 25 °C
74
3.0
5.0
PD
W
V/ns
°C
dv/dt
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +150
300
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 , IAS = 9.0 A (see fig. 12)
c. ISD 9.0 A, di/dt 120 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1" square PCB (FR-4 or G-10 material)
S20-0683-Rev. D, 07-Sep-2020
Document Number: 91032
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000