型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF613-012 | INFINEON |
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Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRF613-013 | INFINEON |
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Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRF613-013PBF | INFINEON |
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Power Field-Effect Transistor, 2.6A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRF613R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB | |
IRF614 | INTERSIL |
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2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET | |
IRF614 | SAMSUNG |
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Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF614 | VISHAY |
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Power MOSFET | |
IRF614-012 | VISHAY |
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Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF614-017PBF | VISHAY |
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Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF614-031 | VISHAY |
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Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal |