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IRF614 PDF预览

IRF614

更新时间: 2024-09-22 22:31:31
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 48K
描述
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

IRF614 数据手册

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IRF614  
2.0A, 250V, 2.0 Ohm,  
N-Channel Power MOSFET  
January 1998  
Features  
Description  
• 2.0A, 250V  
This is an N-Channel enhancement mode silicon gate power  
field effect transistor. It is an advanced power MOSFET  
designed, tested, and guaranteed to withstand a specified  
level of energy in the breakdown avalanche mode of opera-  
tion. This power MOSFET is designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
This type can be operated directly from integrated circuits.  
• r  
DS(ON)  
= 2.0  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA17443.  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Symbol  
Ordering Information  
D
PART NUMBER  
PACKAGE  
TO-220AB  
BRAND  
IRF614  
IRF614  
G
NOTE: When ordering, use the entire part number.  
S
Packaging  
JEDEC TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN (FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
File Number 3273.1  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

IRF614 替代型号

型号 品牌 替代类型 描述 数据表
IRF614 VISHAY

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