IRF520STRLPBF

更新时间： 2024-01-07 19:46:46

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	135K
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IRF520STRLPBF 数据手册

IRF520, SiHF520

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_G

• dV/dt controlled by R_G

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor "D"

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

Period

D =

= 10 V*

D.U.T. I waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. V waveform

Diode recovery

dV/dt

Re-applied

voltage

Body diode forward drop

Ripple ≤ 5 %

Inductor current

* V_GS= 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91017.

Document Number: 91017

S-81240-Rev. A, 16-Jun-08

www.vishay.com

1...4 5 678

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