IRF520STRLPBF

更新时间： 2024-02-07 08:20:28

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	135K
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数据手册

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IRF520STRLPBF 数据手册

IRF520, SiHF520

Vishay Siliconix

750

10¹

V_GS= 0 V, f = 1 MHz

C_iss= C_gs+ C_gd, C_dsShorted

C_rss= C_gd

C_oss= C_ds+ C_gd

175 °C

25 °C

600

450

300

150

C_iss

10⁰

C_oss

C_rss

V_GS= 0 V

1.0 1.1 1.2

10^-1

10⁰

10¹

0.5

0.6

0.7

0.8

0.9

V_DS

Drain-to-Source Voltage (V)

91017_05

V_SD, Source-to-Drain Voltage (V)

91017_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

10³

I_D= 9.2 A

Operation in this area limited

by R_DS(on)

_DS= 80 V

_DS= 50 V

10²

_DS= 20 V

10 µs

100 µs

1 ms

10 ms

T_C= 25 °C

T_J= 175 °C

Single Pulse

For test circuit

see figure 13

0.1

10²

10³

Q_G, Total Gate Charge (nC)

91017_06

V_DS, Drain-to-Source Voltage (V)

91017_08

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

Document Number: 91017

S-81240-Rev. A, 16-Jun-08

1 2 345 6 7 8

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