Datasheet > IR230DM16C

IR230DM16C

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	153K
描述
Rectifier Diode, 1 Phase, 1 Element, 1600V V(RRM), Silicon, WAFER

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IR230DM16C 数据手册

Bulletin I0117J 09/00

IR230DM16CCB

STANDARD RECOVERY DIODES

Junction Size:

Wafer Size:

Square 230 mils

V_RRMClass:

1600 V

PassivationProcess:

Glassivated MOAT

Reference IR Packaged Part: 40EPS Series

Major Ratings and Characteristics

Parameters

Units

1050mV

1600V(**)

TestConditions

V_FM

Maximum Forward Voltage

T_J=25°C, I_F=20A

V_RRMReverse Breakdown Voltage

T_J= 25°C, I_RRM= 100 µA

(*)

(*) Nitrogen flow on die edge.

(**)WaferanddieProbetestclampedat1200Vtolimitarcing. 1600V BV testable only in encapsulated packages

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (20 µm)

230 x 230 mils (see drawing)

100 mm, with std. < 110 > flat

330µm,±10µm

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

45µm

Reject Ink Dot Size

0.25 mm diameter minimum

Seedrawing

Ink Dot Location

Recommended Storage Environment

Storage in original container, in dessicated

nitrogen,withnocontamination

www.irf.com

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