Datasheet > IR230SG06HCB

IR230SG06HCB

更新时间： 2024-01-24 05:47:10

品牌	Logo	应用领域
威世 - VISHAY		栅栅极
页数	文件大小	规格书
4页	41K
描述
Silicon Controlled Rectifier, 600V V(DRM)

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技术参数
数据手册

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IR230SG06HCB 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.83	最大直流栅极触发电流：	60 mA
最大直流栅极触发电压：	1.9 V	最大维持电流：	150 mA
最大通态电压：	1.3 V	断态重复峰值电压：	600 V
子类别：	Silicon Controlled Rectifiers	触发设备类型：	SCR
Base Number Matches：	1

IR230SG06HCB 数据手册

Bulletin I0205J 07/98

IR230SG..HCB SERIES

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

Square 230 mils

V_RRMClass:

600 and 1200 V

Passivation Process:

Glassivated MESA

Reference IR Packaged Part: n. a.

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

Maximum On-state Voltage

1.3 V

T_J= 25°C, I_T= 25 A

V_RRMReverseBreakdownVoltage

600and1200V T_J= 25°C, I_RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max.RequiredDCGateCurrenttoTrigger

Max. Required DC Gate Voltage to Trigger

HoldingCurrentRange

60mA

1.9 V

T_J=25°C,anodesupply=6V,resistiveload

T_J=25°C, anodesupply=6V, resistiveload

Anodesupply=6V, resistiveload

5to150mA

400mA

I_L

MaximumLatchingCurrent

Anodesupply=6V, resistiveload

(1) Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

230 x 230 mils (see drawing)

100 mm, with std. < 100 > flat

370 µm ± 10 µm

Nominal Front Metal Composition, Thickness

ChipDimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

130µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

Document Number: 93836

www.vishay.com

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