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IR230LM06CS02 PDF预览

IR230LM06CS02

更新时间: 2024-01-01 22:43:56
品牌 Logo 应用领域
英飞凌 - INFINEON 快速恢复二极管
页数 文件大小 规格书
3页 110K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

IR230LM06CS02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:WAFER
包装说明:S-XUUC-N1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.45应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:S-XUUC-N1
元件数量:1相数:1
端子数量:1封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:UNCASED CHIP
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.06 µs
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:40
Base Number Matches:1

IR230LM06CS02 数据手册

 浏览型号IR230LM06CS02的Datasheet PDF文件第2页浏览型号IR230LM06CS02的Datasheet PDF文件第3页 
Bulletin I0126J 08/97  
IR230LM06CS02CB  
FAST RECOVERY DIODE  
Junction Size:  
Wafer Size:  
Square 230 mils  
4"  
VRRM Class:  
600 V  
Passivation Process:  
Glassivated MOAT  
Reference IR Packaged Part: 40EPF Series  
Major Ratings and Characteristics  
Parameters  
Units  
1080mV  
600V  
TestConditions  
VFM  
VRRM Reverse Breakdown Voltage  
Reverse RecoveryTime  
Maximum Forward Voltage  
TJ =25°C, IF= 20 A  
TJ = 25°C, IRRM = 100 µA  
(1)  
t
60ns  
TJ =25°C, IF=1A, -di/dt=100A/µs  
rr  
(1)Nitrogen flow on die edge.  
Mechanical Characteristics  
Nominal Back Metal Composition, Thickness  
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)  
100% Al, (20 µm)  
Nominal Front Metal Composition, Thickness  
Chip Dimensions  
230 x 230 mils (see drawing)  
100 mm, with std. < 110 > flat  
300 µm, ± 10 µm  
Wafer Diameter  
Wafer Thickness  
Maximum Width of Sawing Line  
Reject Ink Dot Size  
45 µm  
0.25 mm diameter minimum  
Seedrawing  
Ink Dot Location  
Recommended Storage Environment  
Storage in original container, in dessicated  
nitrogen,withnocontamination  
www.irf.com  
1

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