Datasheet > IPZ40N04S5-8R4_15

IPZ40N04S5-8R4_15

更新时间： 2024-02-06 03:54:40

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	328K
描述
N-channel - Enhancement mode - Normal Level

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IPZ40N04S5-8R4_15 数据手册

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IPZ40N04S5-8R4

OptiMOS^™-5 Power-Transistor

Product Summary

V_DS

8.4

R_DS(on),max

I_D

Features

PG-TSDSON-8

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode - Normal Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

5N0484

IPZ40N04S5-8R4

PG-TSDSON-8

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V _GS=10V¹⁾

T _C=100°C, V _GS=10V²⁾

I _D

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

160

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=20A

I _AS

V _GS

±20

P _tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2015-05-06

12 3 4 5 6 7...9

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