Datasheet > IPW90R120C3XKSA1

IPW90R120C3XKSA1

更新时间： 2024-11-16 18:35:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	548K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IPW90R120C3XKSA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	18 weeks
风险等级：	5.74	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPW90R120C3XKSA1 数据手册

IPW90R120C3

CoolMOS^™Power Transistor

Features

Product Summary

_DS@ T _J=25°C

900

• Lowest figure-of-merit R_ONx Q_g

• Extreme dv/dt rated

_DS(on),max@ T _J=25°C

0.12

Ω

Q _g,typ

270 nC

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Worldwide best R _DS,onin TO247

PG-TO247

• Ultra low gate charge

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies

• PC Silverbox and consumer applications

• Industrial SMPS

Type

Package

Marking

IPW90R120C3

PG-TO247

9R120C

Maximum ratings, at T _J=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=8.8 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

1940

2.9

2),3)

E _AR

I _AR

8.8

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

±30

417

-55 ... 150

static

AC (f>1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _J, T _stg

Operating and storage temperature

Mounting torque

°C

M3 and M3.5 screws

page 1

Ncm

Rev. 1.0

2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

12 3 4 5 6 7...11

中文翻译

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IPW90R120C3XKSA1 替代型号

型号	品牌	替代类型	描述	数据表
IPW90R120C3	INFINEON	类似代替	CoolMOS Power Transistor

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