5秒后页面跳转
IPW90R500C3 PDF预览

IPW90R500C3

更新时间: 2024-11-09 12:20:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
11页 569K
描述
CoolMOS™ Power Transistor

IPW90R500C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantFactory Lead Time:18 weeks
风险等级:2.24雪崩能效等级(Eas):388 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):156 W最大脉冲漏极电流 (IDM):24 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPW90R500C3 数据手册

 浏览型号IPW90R500C3的Datasheet PDF文件第2页浏览型号IPW90R500C3的Datasheet PDF文件第3页浏览型号IPW90R500C3的Datasheet PDF文件第4页浏览型号IPW90R500C3的Datasheet PDF文件第5页浏览型号IPW90R500C3的Datasheet PDF文件第6页浏览型号IPW90R500C3的Datasheet PDF文件第7页 
IPW90R500C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
0.5  
68  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @ T J= 25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO247  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPW90R500C3  
PG-TO247  
9R500C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
11  
6.8  
Continuous drain current  
A
Pulsed drain current2)  
24  
I D,pulse  
E AS  
I D=2.2 A, V DD=50 V  
I D=2.2 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
388  
mJ  
2),3)  
2),3)  
E AR  
0.74  
2.2  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
static  
±30  
AC (f>1 Hz)  
T C=25 °C  
P tot  
156  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  
Please note the new package dimensions arccording to PCN 2009-134-A  

与IPW90R500C3相关器件

型号 品牌 获取价格 描述 数据表
IPW90R500C3FKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IPW90R800C3 INFINEON

获取价格

CoolMOS? Power Transistor
IPW90R800C3FKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IPW95R060PFD7 INFINEON

获取价格

The 950 V CoolMOS™ PFD7 superjunction MOSFET
IPW95R130PFD7 INFINEON

获取价格

The 950 V CoolMOS™ PFD7 superjunction MOSFET
IPW95R310PFD7 INFINEON

获取价格

The 950 V CoolMOS? PFD7 superjunction MOSFET
IPWS65R022CFD7A INFINEON

获取价格

采用 TO-247-3 封装的 22 MΩ IPWS65R022CFD7A 为车规 650
IPWS65R035CFD7A INFINEON

获取价格

35mOhm IPWS65R035CFD7A,采用 TO-247-3 短引线封装,是通过汽
IPWS65R050CFD7A INFINEON

获取价格

50mOhm IPWS65R050CFD7A,采用 TO-247-3 短引线封装,是通过汽
IPWS65R075CFD7A INFINEON

获取价格

75mOhm IPWS65R075CFD7A,采用 TO-247-3 短引线封装,是通过汽