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IPW90R800C3FKSA1 PDF预览

IPW90R800C3FKSA1

更新时间: 2024-11-26 21:14:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 549K
描述
Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN

IPW90R800C3FKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:8.61
雪崩能效等级(Eas):157 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (ID):6.9 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):15 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPW90R800C3FKSA1 数据手册

 浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第2页浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第3页浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第4页浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第5页浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第6页浏览型号IPW90R800C3FKSA1的Datasheet PDF文件第7页 
IPW90R800C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
0.8  
42  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @ T J= 25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO247  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPW90R800C3  
PG-TO247  
9R800C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
6.9  
4.4  
Continuous drain current  
A
Pulsed drain current2)  
15  
I D,pulse  
E AS  
I D=1.4 A, V DD=50 V  
I D=1.4 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
157  
mJ  
2),3)  
2),3)  
E AR  
0.46  
1.4  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
static  
±30  
AC (f>1 Hz)  
T C=25 °C  
P tot  
104  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  
Please note the new package dimensions arccording to PCN 2009-134-A  

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