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IPW95R060PFD7 PDF预览

IPW95R060PFD7

更新时间: 2024-11-10 11:13:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 1388K
描述
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPW95R060PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPW95R060PFD7 in the TO-247 package features RDS(on) of 60 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.

IPW95R060PFD7 数据手册

 浏览型号IPW95R060PFD7的Datasheet PDF文件第2页浏览型号IPW95R060PFD7的Datasheet PDF文件第3页浏览型号IPW95R060PFD7的Datasheet PDF文件第4页浏览型号IPW95R060PFD7的Datasheet PDF文件第5页浏览型号IPW95R060PFD7的Datasheet PDF文件第6页浏览型号IPW95R060PFD7的Datasheet PDF文件第7页 
IPW95R060PFD7  
MOSFET  
PG-TO247-3  
950VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice  
Theꢀlatestꢀ950VꢀCoolMOS™ꢀPFD7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀthe  
superꢀjunctionꢀ(SJ)ꢀtechnologies.ꢀThisꢀtechnologyꢀisꢀdesignedꢀtoꢀaddress  
LightingꢀandꢀIndustrialꢀSMPSꢀapplicationsꢀbyꢀcombiningꢀbest-in-class  
performanceꢀwithꢀstate-of-the-artꢀeaseꢀofꢀuse.ꢀComparedꢀtoꢀthe  
CoolMOS™ꢀP7ꢀfamilies,ꢀtheꢀPFD7ꢀoffersꢀanꢀintegratedꢀultra-fastꢀbody  
diodeꢀenablingꢀusageꢀinꢀresonantꢀtopologiesꢀwithꢀmarketsꢀlowestꢀreverse  
recoveryꢀchargeꢀ(Qrr).  
Tab  
1
2
3
Features  
•ꢀIntegratedꢀultra-fastꢀbodyꢀdiode  
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀQrr  
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss,ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss  
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V  
•ꢀIntegratedꢀfastꢀbodyꢀdiode  
Drain  
Pin 2, Tab  
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability  
•ꢀFullyꢀoptimizedꢀportfolio  
*1  
Gate  
Pin 1  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀTHDꢀandꢀSMDꢀpackages  
•ꢀESDꢀprotectionꢀmin.ꢀClassꢀ2ꢀ(HBM)  
Source  
Pin 3  
*1: Internal body diode  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀrobustnessꢀenablingꢀusageꢀinꢀresonant  
topologies  
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies  
•ꢀImprovedꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  
Potentialꢀapplications  
•ꢀSuitableꢀforꢀhardꢀ&ꢀsoftꢀswitchingꢀtopologies  
•ꢀOptimizedꢀforꢀusageꢀinꢀLLCꢀandꢀZVSꢀtopologies  
•ꢀPFCꢀ&ꢀLLCꢀapplicationsꢀinꢀLightingꢀandꢀIndustrialꢀSMPS  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj = 25 °C  
RDS(on),max  
Value  
Unit  
950  
V
60  
m  
nC  
A
Qg,typ  
315  
ID  
74.7  
20.8  
1300  
0.74  
Eoss @ 500V  
Body diode diF/dt  
Qoss @ 500V  
µJ  
A/µs  
µC  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
95R060D7  
RelatedꢀLinks  
IPW95R060PFD7  
PG-TO247-3  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-04-22  

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